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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STL105N8F7AG |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerFLAT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 95A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 6.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | 20V |
STMicroelectronics STL105N8F7AG is a high-performance N-Channel Power MOSFET featuring an 80 V maximum drain-source voltage and a continuous drain current of 95 A, designed for industrial and automotive power management applications.
The device utilizes advanced STripFET F7 technology incorporating an enhanced trench gate structure, which achieves very low on-state resistance (Rds(on): 6.5 Ω), reducing conduction losses and improving efficiency.
Its internal design minimizes gate charge (typical 46 nC at Vgs), enabling faster switching transitions, making it an ideal choice for high-frequency switching converters and power supplies.
Encapsulated in an 8-pin PowerFLAT surface-mount package, the MOSFET provides a compact form factor conducive to space-limited PCB layouts commonly found in automotive and industrial electronic manufacturing.
The operating temperature range from -55°C to 175°C ensures reliable performance under harsh environments. Compliance with the automotive AEC-Q101 standard further validates its suitability for critical automotive electronics systems.
This MOSFET is engineered for applications including automotive power management, industrial motor drives, DC-DC converters, and other power conversion systems requiring high current handling and efficiency.
Low on-state resistance for efficient power conduction. Enhanced trench gate reduces internal capacitance and gate charge for faster switching. Supports continuous drain current up to 95 A and maximum power dissipation of 127 W.
Wide ambient temperature range from -55°C to 175°C for robust operation. Compact surface-mount 8-pin PowerFLAT packaging enables efficient PCB real estate usage. Typical gate charge of 46 nC at Vgs enhances switching speed and efficiency.
Automotive standard AEC-Q101 certified, suitable for automotive-grade systems. Maximum gate-source voltage of 20 V ensures device protection under operating conditions. Explore the Electronics & Electricals category at EnvMart for more advanced MOSFETs and power semiconductor components to meet your design and production needs.
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