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STMicroelectronics N-Channel Power MOSFET 80 V, 95 A, Enhancement Mode, 8-Pin PowerFLAT STL105N8F7AG

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Model STL105N8F7AG
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type PowerFLAT
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 95A
Maximum Drain Source Voltage Vds 80V
Maximum Drain Source Resistance Rds 6.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 127W
Typical Gate Charge Qg @ Vgs 46nC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Low on-state resistance for efficient power conduction.
  • Enhanced trench gate reduces internal capacitance and gate charge for faster switching.
  • Maximum power dissipation of 127 W suitable for demanding applications.
  • Wide operating temperature range from -55°C to 175°C ensures reliability.
  • 8-pin PowerFLAT surface-mount package for compact PCB designs.
  • Typical gate charge of 46 nC enables fast switching capabilities.
  • AEC-Q101 automotive standard compliant for automotive-grade performance.
  • Maximum gate-source voltage of 20 V provides operational safety margin.

Product Description

STMicroelectronics STL105N8F7AG is a high-performance N-Channel Power MOSFET featuring an 80 V maximum drain-source voltage and a continuous drain current of 95 A, designed for industrial and automotive power management applications.

The device utilizes advanced STripFET F7 technology incorporating an enhanced trench gate structure, which achieves very low on-state resistance (Rds(on): 6.5 Ω), reducing conduction losses and improving efficiency.

Its internal design minimizes gate charge (typical 46 nC at Vgs), enabling faster switching transitions, making it an ideal choice for high-frequency switching converters and power supplies.

Encapsulated in an 8-pin PowerFLAT surface-mount package, the MOSFET provides a compact form factor conducive to space-limited PCB layouts commonly found in automotive and industrial electronic manufacturing.

The operating temperature range from -55°C to 175°C ensures reliable performance under harsh environments. Compliance with the automotive AEC-Q101 standard further validates its suitability for critical automotive electronics systems.

This MOSFET is engineered for applications including automotive power management, industrial motor drives, DC-DC converters, and other power conversion systems requiring high current handling and efficiency.

Low on-state resistance for efficient power conduction. Enhanced trench gate reduces internal capacitance and gate charge for faster switching. Supports continuous drain current up to 95 A and maximum power dissipation of 127 W.

Wide ambient temperature range from -55°C to 175°C for robust operation. Compact surface-mount 8-pin PowerFLAT packaging enables efficient PCB real estate usage. Typical gate charge of 46 nC at Vgs enhances switching speed and efficiency.

Automotive standard AEC-Q101 certified, suitable for automotive-grade systems. Maximum gate-source voltage of 20 V ensures device protection under operating conditions. Explore the Electronics & Electricals category at EnvMart for more advanced MOSFETs and power semiconductor components to meet your design and production needs.

STMicroelectronics N-Channel Power MOSFET 80 V, 95 A, Enhancement Mode, 8-Pin PowerFLAT STL105N8F7AG
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Frequently Asked Questions

The STL105N8F7AG has a maximum continuous drain current of 95 A.

This model has a maximum drain-source voltage rating of 80 V.

The typical gate charge at Vgs for this MOSFET is 46 nC.

It can handle a maximum power dissipation of 127 W.

The operating temperature range is from -55°C to 175°C.

It is encapsulated in an 8-pin PowerFLAT surface-mount package.

This model complies with the AEC-Q101 automotive standard.

The maximum gate-source voltage is 20 V.

The maximum drain-source resistance (Rds(on)) is 6.5 Ω.

This MOSFET features an N-channel type.

It is designed for automotive power management, industrial motor drives, and DC-DC converters.

The country of origin for this MOSFET is India.

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