onsemi Silicon Junction Switching Diode, Single, 3 A Forward Current, 800 V Peak Reverse Voltage, DO-41 Package 1N5407G

onsemi 1N5407G is a Silicon Junction switching diode configured as a single diode offering maximum forward current of 3 A and maximum peak reverse repetitive voltage of 800 V. The diode is housed in a DO-41 package designed for through-hole mounting, measuring 9.5mm in length and 5.3mm in diameter, ensuring compact form factor suitable for electronic circuit designs.

This diode provides a maximum forward voltage of 1 V, supporting low voltage drop operation with a wide operating temperature range from -65°C to 150°C, making it suitable for applications in industrial electronics, power supply rectification, and general semiconductor switching needs. Its peak non-repetitive forward surge current rating of 200 A offers enhanced protection against current surges and transient spikes, improving device reliability.

The 1N5407G does not have specific automotive certifications but is ideal for multiple uses including power conversion, voltage regulation circuits, and general purpose switching applications in laboratory, manufacturing, and commercial electronic equipment environments.

Single silicon junction diode for efficient rectification. Maximum forward current of 3 amperes for robust power handling. Compatible with through-hole mounting for reliable PCB installation. Operating temperature range from -65°C to 150°C for varied environments.

DO-41 package ensuring compact dimensions of 9.5mm length and 5.3mm diameter. Peak non-repetitive forward surge current rating of 200 amperes for transient protection. Maximum forward voltage of 1 volt for low power loss during conduction.

Suitable for industrial, laboratory, and commercial semiconductor applications. Explore a wide range of Switching Diodes and discrete semiconductors on EnvMart for enhanced electronic design and manufacturing solutions.