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STMicroelectronics N-Channel MOSFET 36 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW40N120G2V
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | SCTW40N120G2V |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SCTW40N |
| Maximum Operating Temperature | 175°C |
| Package Type | Hip-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 700mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 3.3V |
Key Features
- This MOSFET operates at high junction temperatures up to 175°C for robust industrial applications.
- Features remarkably low on-resistance and very good switching performance minimizing energy loss.
- Includes an intrinsic body diode that is both very fast and robust.
- Extremely low gate charge and input capacitance improve switching efficiency.
- Comes in a compact Hip-247 package with a 3-pin surface mount configuration.
- Typical gate charge is 13nC at Vgs, enabling fast device switching.
- Maximum power dissipation is 278 W, suitable for high power applications.
- Operating temperature range is from -55°C to 175°C, supporting harsh conditions.
Product Description
STMicroelectronics SCTW40N120G2V is a high-performance N-Channel MOSFET power transistor developed with the latest 2nd generation silicon carbide MOSFET technology. It is designed for industrial, automotive, and power electronics applications requiring reliable high-voltage switching at elevated temperatures.
The device supports a maximum continuous drain current of 36 A and a maximum drain-source voltage rating of 1.2 kV, ensuring it can handle demanding power loads safely. Its surface mount Hip-247 package facilitates efficient heat dissipation and compact integration on PCBs.
Key electrical characteristics include a low maximum Rds(on) of 700 mΩ to reduce conduction losses, a typical gate charge of 13 nC for swift switching, and a robust intrinsic body diode for enhanced operational reliability. The transistor is capable of operating across a broad temperature range from -55°C to 175°C, making it suitable for harsh environments such as industrial controls, automotive power modules, power supplies, and solar inverters.
The compact mechanical dimensions of 15.75 mm length, 20.15 mm height, and 5.15 mm width enable efficient design layouts where space is constrained. With a maximum power dissipation rating of 278 W, this MOSFET balances high power capability with reliable long-term performance.
This device features remarkably low on-resistance per unit area to minimize power loss. The switching loss variation is almost independent of junction temperature. The intrinsic body diode is both very fast and highly robust.
Extremely low gate charge and input capacitance contribute to efficient switching. The Hip-247 surface mount package simplifies assembly and improves thermal management.
Typical applications include industrial motor drives, renewable energy systems, power converters, and automotive electronics. This MOSFET is RoHS compliant but does not carry specific automotive or other certifications.
Explore EnvMart’s extensive selection of semiconductor components to find matching drivers, connectors, and complementary transistors for your power electronics projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 36 A, allowing it to handle significant power loads.
This MOSFET has a maximum drain-source voltage rating of 1.2 kV, making it suitable for high-voltage applications.
The operating temperature range for this unit is from -55°C to 175°C, enabling its use in harsh environments.
The typical gate charge at Vgs is 13 nC, which aids in achieving fast switching performance.
It features a maximum on-resistance (Rds(on)) of 700 mΩ, which helps minimize conduction losses during operation.
This model is housed in a Hip-247 package, which is designed for surface mounting and facilitates efficient heat dissipation.
The dimensions of this unit are 15.75 mm in length, 20.15 mm in height, and 5.15 mm in width.
This MOSFET has a maximum power dissipation rating of 278 W, suitable for high power applications.
It features an N-channel configuration, which is common for enhancement mode MOSFETs.
This model is suitable for applications such as industrial motor drives, renewable energy systems, power converters, and automotive electronics.
The maximum gate-source voltage (Vgs) for this MOSFET is 22 V, which is important for ensuring proper operation.
Yes, this MOSFET is RoHS compliant, indicating it meets certain environmental standards.
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