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Wurth Elektronik Phototransistor 4-Pin DIP 1.4V Maximum Forward Voltage 140817144100
Specifications
| Country of Origin | China |
|---|---|
| Brand | Wurth Elektronik |
| Output type | Phototransistor |
| Series | WL-OCPT |
| Package Type | DIP |
| Number Of Channels | 1 |
| Maximum Forward Voltage | 1.4V |
| Number of Pins | 4 |
Key Features
- Features a 4-pin DIP package for easy integration in electronic circuits.
- Designed with a phototransistor output type for precise light detection.
- Supports a collector-emitter voltage of 35V ensuring durability in various applications.
- Offers isolation voltage of 500Vrms for improved signal integrity.
- Constructed with plastic housing in white color, ensuring robust physical protection.
- RoHS compliant and halogen-free, meeting environmental safety standards.
- Operates reliably within a temperature range from -55 °C up to +110 °C.
- Ideal for use in optocouplers, optoelectronics, and industrial electronic components.
Product Description
Wurth Elektronik 140817144100 Phototransistor 4-Pin DIP is a high-quality optoelectronic component designed for precise and reliable light detection. Featuring a 4-pin DIP package, this phototransistor provides excellent integration capability in a wide range of electronic applications requiring optocoupling and signal isolation.
The device supports a maximum forward voltage of 1.4V and a collector-emitter voltage of 35V, making it suitable for moderate voltage environments. It offers an isolation voltage rating of 500Vrms which ensures signal integrity and protection in industrial and manufacturing contexts.
With a sturdy plastic housing constructed in white color, it offers durable protection against physical and environmental stresses. The phototransistor complies with RoHS directives and is halogen-free, aligning with current environmental safety regulations.
Operating effectively from -55 °C to +110 °C, this phototransistor is suitable for harsh environments commonly encountered in laboratory, industrial automation, automotive electronics, and HVAC applications. It finds broad use in optocouplers and optoelectronic circuits to provide electrical signal isolation via optical transmission.
Features a 4-pin DIP package for easy circuit assembly. Phototransistor output allows sensitive light detection. Supports a maximum forward voltage of 1.4V for safe operation. Collector-emitter voltage up to 35V enables robust usage.
Isolation voltage rating of 500 Vrms supports signal protection. Plastic white housing ensures reliable physical protection. RoHS compliant, halogen-free for environmental safety. Wide operating temperature range from -55 up to 110 °C.
This phototransistor is ideal for electronics designers and engineers requiring optocouplers and light detection components that meet strict industrial and environmental standards. Its robust design and electrical specifications make it applicable for reliable use in industrial, manufacturing, electrical control, laboratory, and commercial electronic systems.
Explore the Electronics Components category at EnvMart for further compatible optoelectronics and Phototransistors.
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Frequently Asked Questions
The maximum forward voltage of this phototransistor is 1.4V.
It features a 4-pin DIP package, allowing for easy integration into electronic circuits.
The collector-emitter voltage rating is 35V, suitable for moderate voltage applications.
The isolation voltage rating is 500Vrms, which helps ensure signal integrity in various applications.
It operates reliably within a temperature range from -55 °C to +110 °C.
Yes, it is RoHS compliant and halogen-free, meeting environmental safety standards.
This model has 1 channel, making it suitable for various optoelectronic applications.
The output type of this component is a phototransistor, designed for precise light detection.
The housing is constructed from plastic, providing robust physical protection.
It is ideal for use in optocouplers, optoelectronics, and industrial electronic components.
This phototransistor belongs to the WL-OCPT series.
The country of origin for this phototransistor is China.
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