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ROHM Transistor 150 mA NPN 50 V 6-Pin SOT-457 Dual Configuration IMX1T110

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.3mm
Length 3mm
Model IMX1T110
Width 1.3mm
Mount Type Surface
Series IMX1
Maximum Operating Temperature 150°C
Package Type SOT-457
Minimum Operating Temperature 0°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 120
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 150mA
Transistor Configuration Dual
Maximum Transition Frequency ft 180MHz

Key Features

  • Surface mount package type SOT-457 ensures compact PCB layout.
  • Maximum power dissipation of 150 mW suitable for low power applications.
  • Operating temperature range from 0°C to 150°C enhances reliability under harsh conditions.
  • Minimum DC current gain hFE of 120 for efficient amplification.
  • Maximum transition frequency of 180 MHz supports high frequency operations.
  • Compact dimensions of 3 mm length and 1.3 mm width and height for space-conscious designs.
  • Maximum collector base voltage of 60 V and emitter base voltage of 7 V provide robust electrical performance.
  • Pin count of 6 facilitates dual transistor configuration in a single package.

Product Description

ROHM IMX1T110 Transistor is a dual NPN bipolar transistor designed with a voltage rating of 50 V and maximum DC collector current of 150 mA, packaged in a surface mount SOT-457 package. It is primarily used in general purpose small signal amplifier circuits where independent transistor elements in a compact module reduce mounting cost and PCB area requirements.

This transistor offers stable operation within an extensive temperature range of 0°C to 150°C, ensuring durability in industrial and commercial electronic applications. Its minimum current gain of 120 and high transition frequency of 180 MHz enable efficient amplification at high frequencies.

The compact form factor, with dimensions of 3 mm length, 1.3 mm width, and height, suits miniature electronic designs and densely populated circuit boards. The dual transistor configuration with 6 pins provides flexibility for various circuit designs.

Key applications for the ROHM IMX1T110 include industrial electronics, consumer devices, and telecommunications equipment requiring reliable small signal amplification with space-saving design.

Surface mount SOT-457 package for compact design. 150 mA maximum collector current for low power usage. Operating temperature range of 0°C to 150°C for industrial reliability. High current gain ensures effective amplification.

Suitable for high frequency operation up to 180 MHz. Compact size for space-efficient PCB layouts. Dual transistor element configuration in single package.

This transistor is compliant with standard industrial requirements, although it has no specific certification approvals. It represents a versatile component option for PCB designers focusing on compact, efficient amplifier circuits.

Explore more ROHM semiconductor products and other Bipolar Transistors in the Electronics & Electricals category on EnvMart.

ROHM Transistor 150 mA NPN 50 V 6-Pin SOT-457 Dual Configuration IMX1T110
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Frequently Asked Questions

The maximum DC collector current of this transistor is 150 mA.

It operates within a temperature range of 0°C to 150°C.

The IMX1T110 is packaged in a surface mount SOT-457 type.

The minimum DC current gain (hFE) for this model is 120.

This transistor supports a maximum transition frequency of 180 MHz.

The dimensions of this model are 3 mm in length, 1.3 mm in width, and 1.3 mm in height.

The maximum collector-emitter voltage (Vceo) is 50 V.

This model has a pin count of 6, allowing for a dual transistor configuration.

The maximum power dissipation for this transistor is 150 mW.

The maximum emitter-base voltage (VEBO) for this transistor is 7 V.

This transistor is suitable for general purpose small signal amplifier circuits in industrial electronics, consumer devices, and telecommunications equipment.

The country of origin for this transistor is India.

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