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STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-220 STP100N6F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP100N6F7 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET F7 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 12.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features low on-state resistance with 5.6 milliohm maximum.
- Operates with enhancement mode channel type for efficient switching.
- Supports maximum power dissipation of 125 watts under full load.
- Has a maximum operating temperature of 175 degrees Celsius for harsh environments.
- Offers typical gate charge of 12.6 nanocoulombs at 10 V gate-source.
- Quick switching enabled by reduced internal capacitance and gate charge.
- Designed for through-hole mounting with 3 pins in TO-220 package.
- Compatible with industrial, power management, and electronic control applications.
Product Description
STMicroelectronics STP100N6F7 is a high-performance N-Channel MOSFET of the STripFET F7 series designed for industrial and power electronics applications. This transistor supports a continuous drain current of 100 amperes and a drain-source voltage rating of 60 volts, packaged in a robust and easy-to-mount TO-220 three-pin case.
It operates in enhancement mode and offers an excellent trade-off between low on-state resistance (Rds(on) max 5.6 milliohms) and fast switching capability thanks to a low gate charge of 12.6 nanocoulombs at 10 V gate-source voltage.
The MOSFET is engineered to dissipate up to 125 watts power and withstand operating temperatures up to 175 degrees Celsius, making it suitable for high-demand environments in industrial automation, motor control, power supplies, and electronic circuits.
Its dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width support efficient PCB layout and thermal management. The device does not carry automotive standards or additional certifications but is designed for reliability and performance in general-purpose applications.
Low Rds(on) for efficient power handling. Enhanced thermal performance for high power dissipation. Through-hole mounting flexibility for prototyping and production. Suitable for fast and efficient switching tasks. Robust design for industrial and electronic applications.
This STMicroelectronics MOSFET is ideal for use in electronic components assemblies, discrete semiconductor applications, and industrial power control systems. Explore more in the Electronics & Electricals > Discrete Semiconductors > MOSFETs category at EnvMart for compatible components and accessories.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STP100N6F7 MOSFET is 100 amperes.
This model has a maximum drain-source voltage rating of 60 volts.
The maximum on-state resistance (Rds(on)) is 5.6 milliohms.
The typical gate charge at a 10 V gate-source voltage is 12.6 nanocoulombs.
It supports a maximum power dissipation of 125 watts under full load conditions.
The maximum operating temperature is 175 degrees Celsius.
The dimensions of the TO-220 package are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width.
This model is designed for through-hole mounting with a 3-pin configuration.
The channel type is N-channel, operating in enhancement mode.
It is suitable for industrial, power management, and electronic control applications.
The minimum operating temperature is -55 degrees Celsius.
The maximum gate-source voltage is -20 to +20 volts.
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