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onsemi PNP Power Transistor MJ21193G, 16 A Maximum DC Collector Current, 250 V Collector Emitter Voltage, TO-204 Package

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.7mm
Length 39.37mm
Model MJ21193G
Width 26.67mm
Mount Type Through Hole
Series MJ21193
Maximum Operating Temperature 200°C
Package Type TO-204
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Collector Emitter Voltage Vceo -250V
Minimum DC Current Gain hFE 8
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -400V
Maximum Power Dissipation Pd 250W
Maximum DC Collector Current Idc -16A
Transistor Configuration Single
Maximum Transition Frequency ft 4MHz

Key Features

  • Features TO-204 package suitable for through-hole mounting applications.
  • Maximum collector emitter voltage rating is 250 V for reliable operation.
  • High power dissipation of up to 250 W supports demanding electrical loads.
  • Wide operating temperature range from -65°C to 200°C enables use in extreme conditions.
  • Low minimum DC current gain of 8 ensures efficient transistor performance.
  • Maximum transition frequency of 4 MHz for fast switching applications.
  • Pin count is 2, suitable for single transistor configuration circuits.
  • Physical dimensions include 39.37 mm length, 26.67 mm width, and 20.7 mm height.

Product Description

The onsemi MJ21193G is a PNP power transistor engineered for robust industrial and electronic applications requiring high current and voltage ratings. Featuring a maximum DC collector current of 16 A and maximum collector emitter voltage of 250 V, it is well-suited for power amplification and switching purposes in heavy-duty electronic circuits.

This transistor utilizes a TO-204 package which facilitates through-hole mounting, providing convenient integration into printed circuit boards. It supports a maximum power dissipation capacity of 250 W, allowing it to handle significant electrical loads without degradation.

Designed for versatility, this transistor operates reliably over a broad temperature range of -65°C to 200°C, making it ideal for demanding environments such as industrial machinery control, automotive systems (though not AEC-Q101 automotive qualified), power supply regulation, and HVAC equipment.

The transistor displays a minimum DC current gain (hFE) of 8 and can switch frequencies up to 4 MHz, which supports efficient performance in high-speed electronic devices and circuits. Its two-pin, single transistor configuration simplifies circuit design for power control applications.

Physical dimensions of 39.37 mm in length, 26.67 mm in width, and 20.7 mm in height are optimized for compact placement on device boards and systems. TO-204 package for through-hole mounting. Maximum DC collector current rating of 16 A.

Maximum collector emitter voltage rating of 250 V. Maximum power dissipation of 250 W. Operating temperature range from -65°C to 200°C. Minimum DC current gain of 8 for efficient transistor gain. Maximum transition frequency of 4 MHz.

Compact physical dimensions for versatile application.

This onsemi transistor is suitable for use in a wide range of industrial, laboratory, manufacturing, and power electronics applications. It is ideal for engineers and technicians designing power amplification, control, and switching systems requiring durable semiconductor components.

Explore more Power Transistors by onsemi and other leading manufacturers here at EnvMart for comprehensive industrial electronic component solutions.

onsemi PNP Power Transistor MJ21193G, 16 A Maximum DC Collector Current, 250 V Collector Emitter Voltage, TO-204 Package
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Frequently Asked Questions

The maximum DC collector current rating for this model is 16 A.

The maximum collector emitter voltage rating is 250 V.

It utilizes a TO-204 package, which is suitable for through-hole mounting applications.

The maximum power dissipation capacity is 250 W, allowing it to handle significant electrical loads.

This transistor operates reliably over a temperature range from -65°C to 200°C.

The minimum DC current gain (hFE) is 8, ensuring efficient transistor performance.

The maximum transition frequency is 4 MHz, suitable for fast switching applications.

This model has a pin count of 2, suitable for single transistor configuration circuits.

The dimensions are 39.37 mm in length, 26.67 mm in width, and 20.7 mm in height.

It supports a single transistor configuration, simplifying circuit design for power control applications.

The maximum emitter base voltage (VEBO) is -5 V.

The country of origin for this model is India.

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