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Infineon N-Channel IGBT, 30 A, 600 V, 250 W Power Dissipation, 3-Pin Surface Mount TO-252 Package IKD15N60RATMA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKD15N60RATMA1
Mount Type Surface
Series TrenchStop
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -40°C
Standards/Approvals JEDEC
Pin Count 3
Maximum Continuous Collector Current Ic 30A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
Channel Type N
Maximum Power Dissipation Pd 250W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Supports a maximum continuous collector current of 30 amperes.
  • Can withstand up to 600 volts maximum collector-emitter voltage.
  • Capable of dissipating up to 250 watts of power.
  • Features low switching losses and low electromagnetic interference.
  • Designed for surface mount applications with a TO-252 package type.
  • Operates reliably between -40°C and 175°C ambient temperatures.
  • Equipped with a maximum gate-emitter voltage of 20 volts.
  • Maximum collector-emitter saturation voltage of 2.1 volts ensures efficient conduction.

Product Description

Infineon IKD15N60RATMA1 is an N-Channel insulated-gate bipolar transistor (IGBT) designed for high efficiency in power electronics applications. It supports a maximum continuous collector current of 30 A and a maximum collector-emitter voltage of 600 V, packaged in a 3-pin TO-252 surface mount configuration suitable for compact circuit layouts.

This component features a maximum power dissipation rating of 250 W, providing robust thermal handling for demanding industrial and electronic system requirements. The device offers low switching losses and reduced electromagnetic interference, contributing to the overall reliability and efficiency of power converter circuits.

Operating temperature ranges from -40°C up to 175°C, making it suitable for industrial environments requiring wide temperature tolerance. The IKD15N60RATMA1 includes a maximum gate-emitter voltage of 20 V and a collector-emitter saturation voltage of 2.1 V, ensuring effective and low-loss switching performance.

This IGBT conforms to JEDEC standards and is part of Infineon's TrenchStop series, known for high quality and advanced trench technology. Although it is not certified for automotive standards, its performance characteristics make it ideal for industrial plants, power supply units, motor drives, and electronic manufacturing applications where high voltage and current handling are critical.

The TO-252 surface mount package supports easy integration into surface mount technology (SMT) manufacturing processes, providing space-saving advantages in PCB design and assembly.

Supports a maximum continuous collector current of 30 amperes. Can withstand up to 600 volts maximum collector-emitter voltage. Capable of dissipating up to 250 watts of power. Features low switching losses and low electromagnetic interference.

Designed for surface mount applications with a TO-252 package type. Operates reliably between -40°C and 175°C ambient temperatures. Equipped with a maximum gate-emitter voltage of 20 volts. Maximum collector-emitter saturation voltage of 2.1 volts ensures efficient conduction.

Meets JEDEC standards and belongs to the TrenchStop series. Not certified to automotive standards.

This product is part of EnvMart's trusted range of discrete semiconductors designed for electronic component distributors and industrial users. Explore the full range of Infineon IGBTs and related semiconductor products on EnvMart for reliable supply and technical support.

Infineon N-Channel IGBT, 30 A, 600 V, 250 W Power Dissipation, 3-Pin Surface Mount TO-252 Package IKD15N60RATMA1
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Frequently Asked Questions

The maximum continuous collector current for this model is 30 amperes.

It can withstand a maximum collector-emitter voltage of 600 volts.

This IGBT is capable of dissipating up to 250 watts of power.

The IGBT is packaged in a 3-pin TO-252 surface mount configuration.

It operates reliably between -40°C and 175°C ambient temperatures.

The maximum gate-emitter voltage is 20 volts.

The maximum collector-emitter saturation voltage is 2.1 volts.

This IGBT conforms to JEDEC standards.

It belongs to the TrenchStop series by Infineon.

It is suitable for industrial plants, power supply units, motor drives, and electronic manufacturing applications.

The TO-252 package has 3 pins.

The IKD15N60RATMA1 is an N-Channel insulated-gate bipolar transistor (IGBT).

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