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DiodesZetex Transistor, 50 mA NPN, 25 V, 3-Pin SOT-23 Package, Surface Mount MMBTH10-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBTH10-7-F
Width 2.5mm
Mount Type Surface
Series MMBT
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 650MHz

Key Features

  • Supports maximum DC collector current of 50 mA for efficient current handling.
  • Maximum collector emitter voltage rating is 25 V ensuring reliable switching performance.
  • Comes in compact 3-pin SOT-23 package suitable for surface mounting.
  • Maximum power dissipation of 300 mW enables stable thermal operation.
  • High frequency transition capability with a maximum 650 MHz transition frequency.
  • Wide operating temperature range from -55°C to 150°C for varying environmental conditions.
  • Automotive standard compliant with AEC-Q101 for reliability in automotive electronics.
  • Minimum DC current gain (hFE) of 60 for effective amplification.

Product Description

DiodesZetex MMBTH10-7-F is a high-performance NPN bipolar transistor designed for discrete semiconductor applications. It features a maximum DC collector current of 50 mA and a collector emitter voltage rating of 25 V, making it suitable for low power switching and amplification tasks in electronic circuits.

This transistor comes in a compact 3-pin SOT-23 surface mount package, ideal for automated PCB assembly and compact device architectures. Its maximum power dissipation rating of 300 mW supports stable thermal management during operation.

The device exhibits a minimum DC current gain of 60 and supports frequencies up to 650 MHz, allowing it to perform well in RF and high-frequency signal amplification applications. The wide operating temperature range from -55°C to 150°C and compliance with the automotive standard AEC-Q101 ensure dependable performance in harsh environments including automotive and industrial uses.

Physical dimensions measure 3 mm in length, 2.5 mm in width, and 1.1 mm in height, supporting space-efficient circuit designs. Key electrical parameters such as maximum collector base voltage of 30 V and maximum emitter base voltage of 3 V provide design flexibility for various circuit requirements.

Supports maximum DC collector current of 50 mA for efficient current handling. Maximum collector emitter voltage rating is 25 V ensuring reliable switching performance. Comes in compact 3-pin SOT-23 package suitable for surface mounting.

Maximum power dissipation of 300 mW enables stable thermal operation. High frequency transition capability with a maximum 650 MHz transition frequency. Wide operating temperature range from -55°C to 150°C for varying environmental conditions.

Automotive standard compliant with AEC-Q101 for reliability in automotive electronics. Minimum DC current gain (hFE) of 60 for effective amplification. Small dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height for compact PCB designs.

Transistor polarity is NPN with single transistor configuration.

This transistor is ideal for use in industrial, automotive, and commercial electronics, including amplification, switching, and signal processing roles. Its robust ratings and automotive compliance make it suitable for critical applications where reliability is essential.

Explore more Bipolar Transistors and semiconductor components at EnvMart for advanced electronic device designing and manufacturing solutions.

DiodesZetex Transistor, 50 mA NPN, 25 V, 3-Pin SOT-23 Package, Surface Mount MMBTH10-7-F
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Frequently Asked Questions

The maximum DC collector current of this model is 50 mA, allowing for efficient current handling in electronic circuits.

This transistor has a maximum collector-emitter voltage rating of 25 V, ensuring reliable switching performance.

It comes in a compact 3-pin SOT-23 package, which is suitable for surface mounting in automated PCB assembly.

The maximum power dissipation rating is 300 mW, which supports stable thermal operation during use.

It supports a maximum transition frequency of 650 MHz, making it suitable for high-frequency signal amplification applications.

The operating temperature range for this transistor is from -55°C to 150°C, accommodating various environmental conditions.

The minimum DC current gain (hFE) is 60, which is effective for amplification purposes in electronic circuits.

The physical dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height, supporting space-efficient circuit designs.

This model is compliant with the automotive standard AEC-Q101, ensuring reliability in automotive electronics applications.

It features a single transistor configuration with NPN polarity, suitable for various electronic applications.

The maximum collector-base voltage (VCBO) is 30 V, and the maximum emitter-base voltage (VEBO) is 3 V, providing design flexibility.

This transistor is suitable for use in industrial, automotive, and commercial electronics, including amplification, switching, and signal processing roles.

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