onsemi Darlington Transistor NPN 800 mA 80 V 4-Pin SOT-223 PZTA28

onsemi PZTA28 Darlington Transistor NPN 4-Pin SOT-223 is a high-performance discrete semiconductor designed for efficient signal amplification and switching applications. It supports a continuous collector current of up to 800 mA and withstands collector emitter voltages up to 80 V, making it suitable for various industrial and electronic circuits requiring robust performance.

This transistor’s remarkably high minimum DC current gain (hFE) of 10000 enables substantial signal amplification, essential for Darlington pair configurations and power amplifiers. The SOT-223 package promotes easy surface mounting on PCBs while maintaining a compact footprint, ideal for modern electronic device miniaturization.

Engineered for wide operating temperature ranges from -55°C to 150°C, the PZTA28 offers reliable function under demanding environmental conditions, making it suitable for automotive, industrial controls, and power management systems. The transistor polarization is NPN, ensuring compatibility with standard bipolar junction transistor circuits.

The device exhibits a maximum power dissipation rating of 1 W and low collector emitter saturation voltage (1.2 V), which improves energy efficiency and reduces thermal stress during operation. Protection against emitter base breakdown and collector base voltages further enhances device longevity and circuit stability.

With precise dimensions of approximately 6.5 mm in length and 1.6 mm in height, this component fits efficiently on printed circuit boards, saving valuable space for compact device designs.

Maximum continuous collector current: 800 mA. Maximum collector emitter voltage: 80 V. Minimum DC current gain (hFE): 10000. Power dissipation: 1 W. Package type: SOT-223, 4-pin surface mount. Transistor polarity: NPN. Operating temperature range: -55°C to 150°C.

Maximum saturation voltage Vce(sat): 1.2 V. Emitter base voltage maximum: 12 V. Collector base voltage maximum: 80 V. Compact size: 6.5 mm length and 1.6 mm height.

This transistor is commonly used in electronics manufacturing, industrial automation controls, power management circuits, automotive systems, and other applications requiring high gain and reliable switching performance. It meets industry standards for semiconductor components and provides robust and predictable functionality.

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