onsemi Small Signal NPN Transistor, Maximum DC Collector Current 700 mA, Collector Emitter Voltage 160 V 2SC3648S-TD-E

onsemi 2SC3648S-TD-E is a high-quality small signal NPN transistor featuring a 3-pin PCP surface mount package. It offers a maximum DC collector current of 700 mA and a collector emitter voltage of 160 V, making it suitable for medium power amplification and switching in electronic circuits.

This transistor has a maximum power dissipation rating of 1.3 W and can reliably operate at temperatures up to 150°C, providing robust performance under demanding conditions. With a transition frequency of 120 MHz and a minimum DC current gain (hFE) of 90, it is well-suited for high-frequency and low noise amplification applications.

The compact physical dimensions of 4.5 mm length, 4 mm width, and 0.9 mm height allow for dense PCB designs and automated surface mounting. Its single NPN transistor configuration supports a wide range of discrete semiconductor applications in consumer electronics, industrial control, and communication devices.

Maximum collector base voltage of 180 V and maximum emitter base voltage of 6 V ensure safe operation within electrical limits, increasing device reliability. As a surface mount device, it supports modern assembly line manufacturing techniques.

Common use cases include signal amplification, switching circuits, and other general-purpose applications in electronic semiconductor systems found in industrial, consumer, and communication equipment.

Maximum DC Collector Current of 700 mA supports medium current applications. Collector Emitter Voltage rating of 160 V ensures reliability in switching circuits. Maximum Power Dissipation of 1.3 W suitable for low power operations.

High Maximum Operating Temperature of 150°C enables use in tough environments. Transition Frequency of 120 MHz allows for high-frequency signal processing. Compact Surface Mount PCP package minimizes PCB space usage. High Minimum DC Current Gain (hFE) of 90 for effective amplification.

Robust voltage ratings including Collector Base Voltage of 180 V and Emitter Base Voltage of 6 V. Small size with length 4.5 mm, width 4 mm, height 0.9 mm. Single NPN transistor configuration for versatile discrete semiconductor applications.

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