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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD45N10F7 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 45A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
STMicroelectronics STD45N10F7 is a high-performance N-Channel STripFET™ H7 MOSFET designed for power switching and amplification in electronic circuits. This device operates in enhancement mode and handles a maximum continuous drain current of 45 A with a drain-source voltage rating of up to 100 V. Its TO-252 3-pin surface mount package is compact, measuring 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, facilitating space-efficient PCB designs.
Equipped with a low drain-source resistance of 18 milliohms, the MOSFET ensures minimal conduction losses and efficient operation in demanding power applications. The device supports a maximum power dissipation of 60 W, making it suitable for use in industrial, automotive, and consumer electronics where high reliability is essential.
The gate characteristics include a typical gate charge of 25 nC at Vgs, allowing for rapid switching and improved circuit responsiveness. Its gate-source voltage tolerance of ±20 V provides enhanced gate control margins, ensuring stable operation throughout the operating temperature range from -55°C to 175°C.
STMicroelectronics STripFET H7 MOSFETs are widely used in power management circuits, DC-DC converters, motor control, and other applications requiring efficient switching and thermal robustness. The surface-mount TO-252 package facilitates automated assembly and reduces thermal resistance compared to traditional packages.
Enhancement mode device suitable for power switching applications. Low on-resistance of 18 milliohms ensuring efficient conduction. Maximum power dissipation rating of 60 W for robust thermal handling. Wide operating temperature range from -55°C to 175°C for reliable performance.
Typical gate charge of 25 nC at Vgs for fast switching capabilities. Maximum gate-source voltage of ±20 V for enhanced gate control. Compact dimensions with 6.6 mm length, 6.2 mm width, and 2.4 mm height. Surface mount package designed for efficient PCB integration.
This STD45N10F7 N-Channel STripFET H7 MOSFET by STMicroelectronics offers a robust solution for industrial, automotive, consumer electronics, and power management applications. It combines efficiency, compact sizing, and thermal resilience to meet stringent design requirements.
Explore EnvMart for a comprehensive range of STMicroelectronics semiconductors and MOSFETs that suit your electronic circuit design needs.
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