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STMicroelectronics STripFET H7 N-Channel MOSFET, 45 A, 100 V, Enhancement Mode, 3-Pin TO-252 STD45N10F7

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD45N10F7
Width 6.2mm
Mount Type Surface
Series STripFET H7
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 45A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 18mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 60W
Typical Gate Charge Qg @ Vgs 25nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.1V

Key Features

  • Enhancement mode device suitable for power switching applications.
  • Low on-resistance of 18 milliohms ensuring efficient conduction.
  • Maximum power dissipation rating of 60 W for robust thermal handling.
  • Wide operating temperature range from -55°C to 175°C for reliable performance.
  • Typical gate charge of 25 nC at Vgs for fast switching capabilities.
  • Maximum gate-source voltage of ±20 V for enhanced gate control.
  • Compact dimensions with 6.6 mm length, 6.2 mm width, and 2.4 mm height.
  • Surface mount package designed for efficient PCB integration.

Product Description

STMicroelectronics STD45N10F7 is a high-performance N-Channel STripFET™ H7 MOSFET designed for power switching and amplification in electronic circuits. This device operates in enhancement mode and handles a maximum continuous drain current of 45 A with a drain-source voltage rating of up to 100 V. Its TO-252 3-pin surface mount package is compact, measuring 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, facilitating space-efficient PCB designs.

Equipped with a low drain-source resistance of 18 milliohms, the MOSFET ensures minimal conduction losses and efficient operation in demanding power applications. The device supports a maximum power dissipation of 60 W, making it suitable for use in industrial, automotive, and consumer electronics where high reliability is essential.

The gate characteristics include a typical gate charge of 25 nC at Vgs, allowing for rapid switching and improved circuit responsiveness. Its gate-source voltage tolerance of ±20 V provides enhanced gate control margins, ensuring stable operation throughout the operating temperature range from -55°C to 175°C.

STMicroelectronics STripFET H7 MOSFETs are widely used in power management circuits, DC-DC converters, motor control, and other applications requiring efficient switching and thermal robustness. The surface-mount TO-252 package facilitates automated assembly and reduces thermal resistance compared to traditional packages.

Enhancement mode device suitable for power switching applications. Low on-resistance of 18 milliohms ensuring efficient conduction. Maximum power dissipation rating of 60 W for robust thermal handling. Wide operating temperature range from -55°C to 175°C for reliable performance.

Typical gate charge of 25 nC at Vgs for fast switching capabilities. Maximum gate-source voltage of ±20 V for enhanced gate control. Compact dimensions with 6.6 mm length, 6.2 mm width, and 2.4 mm height. Surface mount package designed for efficient PCB integration.

This STD45N10F7 N-Channel STripFET H7 MOSFET by STMicroelectronics offers a robust solution for industrial, automotive, consumer electronics, and power management applications. It combines efficiency, compact sizing, and thermal resilience to meet stringent design requirements.

Explore EnvMart for a comprehensive range of STMicroelectronics semiconductors and MOSFETs that suit your electronic circuit design needs.

STMicroelectronics STripFET H7 N-Channel MOSFET, 45 A, 100 V, Enhancement Mode, 3-Pin TO-252 STD45N10F7
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Frequently Asked Questions

The maximum continuous drain current for this model is 45 A.

This unit has a maximum drain-source voltage rating of 100 V.

It features a low on-resistance of 18 milliohms, ensuring efficient conduction.

The maximum power dissipation rating is 60 W, allowing for robust thermal handling.

The typical gate charge at Vgs is 25 nC, which supports fast switching capabilities.

The operating temperature range is from -55°C to 175°C, ensuring reliable performance in various conditions.

The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

The maximum gate-source voltage tolerance is ±20 V, providing enhanced gate control.

This model uses a surface mount type, designed for efficient PCB integration.

It is suitable for power management circuits, DC-DC converters, and motor control applications.

This MOSFET has a pin count of 3.

This model belongs to the STripFET H7 series by STMicroelectronics.

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