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onsemi Silicon Junction Switching Diode Single, 2 A Forward Current, 100 V DO-214AC MURA110T3G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.05mm
Length 4.57mm
Model MURA110T3G
Width 2.92mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type DO-214AC
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 50A
Maximum Forward Voltage Vf 875mV
Peak Reverse Recovery Time trr 30ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • Designed for surface mount applications requiring high reliability.
  • Single diode configuration suitable for rectification and switching tasks.
  • Maximum forward voltage of 875 mV ensures efficient conduction.
  • Wide operating temperature range from -65°C to 175°C for versatile environments.
  • Peak reverse recovery time of 30 ns enables fast switching applications.
  • Peak non-repetitive forward surge current of 50 A suitable for transient load conditions.
  • Absence of automotive standard limits use in automotive qualified systems.

Product Description

onsemi MURA110T3G is a Silicon Junction Switching Diode designed for use in electronic circuits requiring efficient switching capabilities and reliable current handling. This single diode supports a maximum forward current of 2 A and withstands peak reverse repetitive voltage up to 100 V, suitable for a range of industrial and electrical applications.

Its surface mount DO-214AC package offers compactness with dimensions of 4.57 mm length, 2.92 mm width, and 2.05 mm height, optimizing printed circuit board (PCB) real estate. The diode features a maximum forward voltage of 875 millivolts, contributing to energy-efficient conduction and minimal heat generation during operation.

Capable of operating in extreme environments, it operates across a wide temperature range from -65°C to 175°C, making it ideal for industrial, automotive, and power management applications where environmental robustness is critical.

The device also exhibits a peak reverse recovery time of 30 nanoseconds, enabling fast switching performance suitable for high-frequency electronic designs. The peak non-repetitive forward surge current rating of 50 A ensures diode resiliency during transient load or surge conditions.

Designed for surface mount applications requiring high reliability. Single diode configuration suitable for rectification and switching tasks. Maximum forward voltage of 875 mV ensures efficient conduction. Wide operating temperature range from -65°C to 175°C for versatile environments.

Compact dimensions: 4.57mm length x 2.92mm width x 2.05mm height for space-saving PCB layouts. Peak reverse recovery time of 30 ns enables fast switching applications. Peak non-repetitive forward surge current of 50 A suitable for transient load conditions.

Absence of automotive standard limits use in automotive qualified systems.

This product is commonly used in power supply circuits, automotive electrical systems (non-AEC-Q101), telecommunications, and general electronic design where reliable diode switching is essential.

Explore the comprehensive selection of discrete semiconductors and Switching Diodes in the Electronics & Electricals category at EnvMart for additional options and compatible components.

onsemi Silicon Junction Switching Diode Single, 2 A Forward Current, 100 V DO-214AC MURA110T3G
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Frequently Asked Questions

The maximum forward current rating of the MURA110T3G is 2 A.

This diode can withstand a peak reverse repetitive voltage of up to 100 V.

The MURA110T3G is packaged in a DO-214AC format, suitable for surface mount applications.

The dimensions of the MURA110T3G are 4.57 mm in length, 2.92 mm in width, and 2.05 mm in height.

The maximum forward voltage for this model is 875 mV.

This diode operates within a temperature range of -65°C to 175°C.

The peak non-repetitive forward surge current rating for this diode is 50 A.

The peak reverse recovery time for the MURA110T3G is 30 ns, allowing for fast switching applications.

This diode has a pin count of 2.

The MURA110T3G features a single diode configuration, suitable for rectification and switching tasks.

This model is commonly used in power supply circuits, telecommunications, and general electronic design where reliable diode switching is essential.

The absence of automotive standards limits the use of this diode in automotive qualified systems.

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