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onsemi Transistor PNP 3 A 40 V 4-Pin SOT-223 Surface Mount NJT4030PT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model NJT4030PT3G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Packaged in a 4-pin SOT-223 surface mount case for easy PCB mounting.
  • Designed with a single transistor configuration and PNP polarity.
  • Maximum power dissipation is 2 watts, suitable for general-purpose switching and amplification.
  • Features a minimum DC current gain (hFE) of 100 for efficient operation.
  • Operating temperature range from -55°C to 150°C for robust industrial use.
  • Complies with automotive standard AEC-Q101 for reliability in automotive applications.
  • Maximum transition frequency of 1 MHz supports moderate frequency applications.

Product Description

The onsemi NJT4030PT3G is a general-purpose PNP bipolar transistor featuring a maximum DC collector current of -3 A and maximum collector-emitter voltage of -40 V. It is designed in a compact 4-pin SOT-223 surface mount package, enabling efficient PCB assembly and usage in tightly packed electronic circuits.

This transistor supports a power dissipation of up to 2 watts, making it suitable for power switching, amplification, and automotive electronics where reliable performance is paramount. The device's minimum DC current gain of 100 ensures effective current amplification, while its transition frequency of 1 MHz is adequate for many low to medium-frequency applications.

It operates reliably over a wide temperature range from -55°C to 150°C, supporting harsh environmental conditions. Moreover, this transistor meets the automotive industry standard AEC-Q101, indicating its qualification for automotive system designs requiring stringent quality and durability.

Physical dimensions are compact - 6.7 mm length, 3.7 mm width, and 1.75 mm height - minimizing the footprint on the printed circuit board. The pin configuration of four pins allows for straightforward integration into various circuit designs.

4-pin SOT-223 surface mount package for efficient PCB integration. Rated for -3 A collector current and -40 V collector-emitter voltage. Power dissipation of 2 W suitable for general purpose use. Minimum DC current gain of 100 for reliable amplification.

Wide operating temperature range from -55°C to 150°C for industrial applications. Meets automotive AEC-Q101 standard ensuring high reliability. Compact dimensions: 6.7 mm (L) x 3.7 mm (W) x 1.75 mm (H). Maximum transition frequency of 1 MHz for moderate frequency circuits.

This onsemi transistor is ideal for use in industrial, automotive, and consumer electronics, including power regulation, amplification, and switching applications requiring dependable performance and automotive-grade quality. Explore a broad range of related semiconductor components and transistors in the Bipolar Transistors category at EnvMart.

onsemi Transistor PNP 3 A 40 V 4-Pin SOT-223 Surface Mount NJT4030PT3G
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Frequently Asked Questions

The maximum DC collector current for the NJT4030PT3G is -3 A.

It has a maximum power dissipation rating of 2 watts, suitable for general-purpose applications.

The operating temperature range is from -55°C to 150°C, making it suitable for industrial applications.

This transistor is packaged in a 4-pin SOT-223 surface mount case, facilitating efficient PCB integration.

The minimum DC current gain (hFE) is 100, ensuring effective current amplification.

The maximum collector-emitter voltage (Vceo) is -40 V.

It complies with the automotive standard AEC-Q101, indicating its reliability for automotive applications.

The maximum transition frequency is 1 MHz, suitable for moderate frequency applications.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

It features a single transistor configuration with PNP polarity.

The maximum collector-base voltage (VCBO) is 40 V, and the maximum emitter-base voltage (VEBO) is 6 V.

This transistor is suitable for general-purpose switching, amplification, and automotive electronics.

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