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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 8mm |
| Model | FFSM2065B |
| Width | 8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 20A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 40μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 84A |
| Maximum Forward Voltage Vf | 1.7V |
onsemi FFSM2065B is a Silicon Carbide (SiC) Schottky Diode engineered for superior switching performance and high reliability in demanding electronic applications. Featuring a surface mount 5-pin PQFN package with dimensions of 8 mm by 8 mm and a slim height of 1.1 mm, this diode fits compact PCB layouts effortlessly.
With a maximum continuous forward current of 20 A and a peak reverse repetitive voltage of 650 V, it suits high-power inverters, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). The device’s low forward voltage drop of 1.7 V enhances overall system efficiency by reducing conduction losses.
Capable of operating across a broad temperature range from −55°C up to 175°C and sustaining peak non-repetitive surge currents of 84 A, the FFSM2065B offers robust thermal performance and reliability for industrial and automotive environments. Its low peak reverse current of 40 μA contributes to minimizing standby losses.
This diode is compliant with the automotive standard AEC-Q101, ensuring stringent quality and reliability for automotive electronic systems. Ideal for applications in industrial, automotive, and power electronics sectors, the FFSM2065B enables compact, efficient, and high-performance designs.
This diode supports a maximum continuous forward current of 20 A. It is housed in a compact 5-pin PQFN surface mount package measuring 8 mm by 8 mm. The peak reverse repetitive voltage rating is 650 V, ensuring high voltage resilience.
With a maximum forward voltage of 1.7 V, it reduces power loss during conduction. The device operates reliably over a wide temperature range from −55°C to 175°C. The diode withstands peak non-repetitive forward surge currents up to 84 A.
It features low peak reverse current leakage at 40 μA for enhanced efficiency. The compact height of 1.1 mm supports space-constrained designs. Complies with the automotive standard AEC-Q101, guaranteeing quality for automotive applications.
Explore the full range of semiconductor and diode components on EnvMart for your industrial and automotive applications.
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