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DiodesZetex Small Signal PNP Transistor 600 mA, 40 V, 3-Pin SOT-23 MMBT4403-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.25mm
Length 3mm
Model MMBT4403-7-F
Width 2.5mm
Mount Type Surface
Series MMBT4403
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • Designed for surface mount applications with a compact SOT-23 package.
  • Maximum power dissipation rated at 300 mW for reliable operation.
  • High transition frequency of 200 MHz suitable for high-frequency switching.
  • Operating temperature range from -55°C to 150°C for versatile industrial use.
  • Automotive standard compliant with AEC-Q200, AEC-Q100, and AEC-Q101 certifications.
  • Single transistor configuration with PNP polarity for diverse amplifier applications.
  • Pin count of 3 enables easy integration in compact circuit designs.
  • Robust construction with dimensions approximately 3 mm length, 2.5 mm width, and 1.25 mm height.

Product Description

DiodesZetex MMBT4403-7-F is a small signal PNP bipolar transistor offering a maximum collector current of 600 mA and a maximum collector emitter voltage of 40 V. This transistor is mounted in a surface mount technology (SMT) SOT-23 package with three pins, enabling streamlined integration into modern compact electronic circuits.

The device supports a power dissipation of up to 300 mW, making it suitable for general amplification and switching applications in industrial, automotive, and consumer electronics. It is designed to operate efficiently within an extended temperature range from -55°C to 150°C, catering to harsh environments including automotive electronic control units and industrial control systems.

This transistor also offers a high transition frequency (ft) of 200 MHz, facilitating fast switching speeds necessary in RF and high-frequency applications. The minimum DC current gain (hFE) is 20, providing adequate amplification characteristics for signal processing tasks.

With compliance to automotive standards AEC-Q200, AEC-Q100, and AEC-Q101, the MMBT4403-7-F transistor ensures quality and reliability expected in automotive electronic systems. The device is produced in China and designed with a robust physical footprint of 3 mm length, 2.5 mm width, and 1.25 mm height.

The single transistor configuration with PNP polarity is useful in complementary amplifier designs, switching circuits, and general-purpose electronic control functions. Designed for surface mount applications with a compact SOT-23 package.

Maximum power dissipation rated at 300 mW for reliable operation. High transition frequency of 200 MHz suitable for high-frequency switching. Operating temperature range from -55°C to 150°C for versatile industrial use. Automotive standard compliant with AEC-Q200, AEC-Q100, and AEC-Q101 certifications.

Single transistor configuration with PNP polarity for diverse amplifier applications. Pin count of 3 enables easy integration in compact circuit designs. Robust construction with dimensions approximately 3 mm length, 2.5 mm width, and 1.25 mm height.

This MMBT4403-7-F transistor is ideal for industrial, automotive electronics, telecommunications equipment, and general electronic product manufacturing requiring reliable switching and amplification components. Explore more semiconductor and discrete transistor products from DiodesZetex and other leading manufacturers on EnvMart.

Explore more products in our Bipolar Transistors category.

DiodesZetex Small Signal PNP Transistor 600 mA, 40 V, 3-Pin SOT-23 MMBT4403-7-F
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Frequently Asked Questions

The maximum collector current for this transistor is 600 mA.

The MMBT4403-7-F has a high transition frequency of 200 MHz, suitable for high-frequency switching applications.

It operates within a temperature range from -55°C to 150°C, making it suitable for various industrial applications.

This transistor is housed in a compact SOT-23 surface mount package.

The MMBT4403-7-F features a pin count of 3, allowing for easy integration into circuit designs.

This model complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101, ensuring reliability in automotive applications.

The maximum power dissipation for the MMBT4403-7-F is rated at 300 mW.

The minimum DC current gain (hFE) for the MMBT4403-7-F is 20, providing adequate amplification for various applications.

This transistor measures approximately 3 mm in length, 2.5 mm in width, and 1.25 mm in height.

The maximum collector-emitter voltage (Vceo) for the MMBT4403-7-F is 40 V.

It is configured as a single PNP transistor, suitable for various amplifier applications.

This transistor is suitable for general amplification and switching applications in industrial, automotive, and consumer electronics.

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