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DiodesZetex Small Signal Dual NPN/PNP Transistor, 200 mA DC Collector Current, 160 V Collector Emitter Voltage MMDT5451-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model MMDT5451-7-F
Width 2.2mm
Mount Type Surface
Series MMDT
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor supports both NPN and PNP polarities for versatile circuit design.
  • Maximum power dissipation is rated at 200 mW, ensuring reliable operation within limits.
  • The device operates over a wide temperature range from -55°C to 150°C.
  • Has a high transition frequency up to 300 MHz for enhanced high-speed performance.
  • Meets automotive standard AEC-Q101, ensuring quality and reliability in automotive circuits.
  • Compact dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height suit space-constrained applications.
  • Offers a minimum DC current gain (hFE) of 30 for effective amplification.
  • Isolated transistor configuration and surface mount type simplifies PCB assembly.

Product Description

DiodesZetex MMDT5451-7-F is a small signal dual NPN and PNP transistor designed for versatile low power switching and amplification use in electronic circuits. It carries a maximum DC collector current of 200 mA and can withstand up to 160 V collector emitter voltage, making it suitable for medium voltage applications in consumer electronics, automotive, and industrial equipment.

Housed in a compact 6-pin SOT-363 surface mount package, this transistor offers an isolated configuration and supports dual transistor polarity, enabling flexible circuit designs. Its power dissipation capability is rated at 200 mW ensuring stable operation. The device provides a minimum DC current gain of 30, balancing linear amplification and switching requirements.

The MMDT5451-7-F transistor operates over a broad temperature range from -55°C to 150°C and features a high transition frequency of 300 MHz, making it well suited to high frequency signal processing and communication systems. Compliance with the automotive standard AEC-Q101 ensures performance suitability in automotive electronic modules requiring reliability and quality assurance.

Its compact physical dimensions (2.2 mm length, 2.2 mm width, 1.1 mm height) allow efficient PCB space allocation in dense circuit assemblies. The surface mounting facilitates automated manufacturing and reduces assembly time.

Supports NPN + PNP transistor polarity for dual functionality. Maximum DC collector current of 200 mA. Collector emitter voltage (Vceo) rating of 160 V. High transition frequency of 300 MHz for high-speed switching. Power dissipation capability of 200 mW.

Operating temperature range from -55°C to 150°C. Meets automotive standard AEC-Q101 for automotive-grade quality. Compact SOT-363 6-pin surface mount package.

This transistor is widely used in industrial, automotive, communication, and consumer electronic applications requiring dual transistor functionality, compact design, and reliable switching performance.

Explore further in the DiodesZetex range of Bipolar Transistors available in EnvMart for your precise electronic component needs.

DiodesZetex Small Signal Dual NPN/PNP Transistor, 200 mA DC Collector Current, 160 V Collector Emitter Voltage MMDT5451-7-F
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Frequently Asked Questions

The MMDT5451-7-F has a maximum DC collector current of 200 mA.

This model can withstand a collector-emitter voltage (Vceo) of up to 160 V.

It operates over a wide temperature range from -55°C to 150°C.

The transistor features a high transition frequency of 300 MHz, suitable for high-speed applications.

It offers a minimum DC current gain (hFE) of 30, which is effective for amplification.

The MMDT5451-7-F is housed in a compact 6-pin SOT-363 surface mount package.

Yes, it supports both NPN and PNP polarities, providing versatility in circuit design.

The maximum power dissipation is rated at 200 mW, ensuring reliable operation within limits.

It complies with the automotive standard AEC-Q101, ensuring quality and reliability in automotive applications.

The dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

The maximum collector-base voltage (VCBO) rating is 180 V.

It features an isolated transistor configuration, which simplifies PCB assembly.

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