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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.77mm |
| Length | 5.3mm |
| Model | KSD1616AGTA |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | KSD1616A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 81 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 120V |
| Maximum Power Dissipation Pd | 750mW |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 160MHz |
onsemi KSD1616AGTA is a small signal NPN transistor designed for electronic applications requiring up to 1 A collector current and a maximum collector-emitter voltage of 60 V. Its compact TO-92 package with 3 pins allows easy mounting through a PCB, making it suitable for a wide variety of electronic circuit designs.
This transistor supports a maximum power dissipation of 750 mW and operates reliably within the temperature range of 0°C to 150°C. The high transition frequency of 160 MHz enables its use in high-frequency switching and signal amplification scenarios.
With a collector-base voltage rating of 120 V and a minimum DC current gain of 81, the KSD1616AGTA ensures robust performance in amplification and switching tasks. The NPN transistor configuration is widely used in electronic devices for efficient current control and switching.
Typical applications include home electronics, power management systems, and general purpose amplifier circuits. It is also beneficial in design projects that require compact, reliable, and high-frequency transistors.
This transistor features a 3-pin TO-92 through-hole package ideal for PCB mounting. It supports a maximum power dissipation of 750 mW for reliable operation. The device operates within a temperature range of 0°C to 150°C, suitable for varied environments.
Offers a maximum transition frequency of 160 MHz, enabling high-frequency switching applications. The collector-base voltage rating is up to 120 V, ensuring robust performance. The transistor has a minimum DC current gain (hFE) of 81 for amplification efficiency.
NPN configuration suitable for amplification and switching applications.
The onsemi KSD1616AGTA is a reliable choice for industrial, laboratory, consumer electronics, and educational electronics projects. Select this transistor for applications demanding consistent performance and ease of integration.
Browse more transistors and semiconductors in the Electronics & Electricals category on EnvMart.
Explore more products in our Bipolar Transistors category.
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