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onsemi Small Signal NPN Transistor 1 A 60 V TO-92 Package 3-Pin KSD1616AGTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.3mm
Model KSD1616AGTA
Width 4.19mm
Mount Type Through Hole
Series KSD1616A
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 81
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 750mW
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 160MHz

Key Features

  • This transistor features a 3-pin TO-92 through-hole package ideal for PCB mounting.
  • It supports a maximum power dissipation of 750 mW for reliable operation.
  • The device operates within a temperature range of 0°C to 150°C, suitable for varied environments.
  • Offers a maximum transition frequency of 160 MHz, enabling high-frequency switching applications.
  • The collector-base voltage rating is up to 120 V, ensuring robust performance.
  • The transistor has a minimum DC current gain (hFE) of 81 for amplification efficiency.
  • NPN configuration suitable for amplification and switching applications.

Product Description

onsemi KSD1616AGTA is a small signal NPN transistor designed for electronic applications requiring up to 1 A collector current and a maximum collector-emitter voltage of 60 V. Its compact TO-92 package with 3 pins allows easy mounting through a PCB, making it suitable for a wide variety of electronic circuit designs.

This transistor supports a maximum power dissipation of 750 mW and operates reliably within the temperature range of 0°C to 150°C. The high transition frequency of 160 MHz enables its use in high-frequency switching and signal amplification scenarios.

With a collector-base voltage rating of 120 V and a minimum DC current gain of 81, the KSD1616AGTA ensures robust performance in amplification and switching tasks. The NPN transistor configuration is widely used in electronic devices for efficient current control and switching.

Typical applications include home electronics, power management systems, and general purpose amplifier circuits. It is also beneficial in design projects that require compact, reliable, and high-frequency transistors.

This transistor features a 3-pin TO-92 through-hole package ideal for PCB mounting. It supports a maximum power dissipation of 750 mW for reliable operation. The device operates within a temperature range of 0°C to 150°C, suitable for varied environments.

Offers a maximum transition frequency of 160 MHz, enabling high-frequency switching applications. The collector-base voltage rating is up to 120 V, ensuring robust performance. The transistor has a minimum DC current gain (hFE) of 81 for amplification efficiency.

NPN configuration suitable for amplification and switching applications.

The onsemi KSD1616AGTA is a reliable choice for industrial, laboratory, consumer electronics, and educational electronics projects. Select this transistor for applications demanding consistent performance and ease of integration.

Browse more transistors and semiconductors in the Electronics & Electricals category on EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 1 A 60 V TO-92 Package 3-Pin KSD1616AGTA
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Frequently Asked Questions

The maximum collector current for this transistor is 1 A.

It supports a maximum power dissipation of 750 mW.

The device operates within a temperature range of 0°C to 150°C.

The maximum transition frequency is 160 MHz, suitable for high-frequency applications.

It comes in a TO-92 package, which is a 3-pin through-hole design.

The collector-base voltage rating is up to 120 V.

The minimum DC current gain (hFE) is 81, indicating its amplification efficiency.

The dimensions are 21.77 mm in height, 5.3 mm in length, and 4.19 mm in width.

It uses an NPN configuration, suitable for amplification and switching applications.

The maximum emitter-base voltage (VEBO) is 6 V.

The country of origin for this transistor is India.

It is suitable for use in home electronics, power management systems, and general purpose amplifier circuits.

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