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DiodesZetex PNP Bipolar Transistor 1 A, 100 V, 3-Pin SOT-89 Package ZXTP25100CZTA

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DiodesZetex PNP Bipolar Transistor 1 A, 100 V, 3-Pin SOT-89 Package ZXTP25100CZTA

Name: DiodesZetex PNP Bipolar Transistor 1 A, 100 V, 3-Pin SOT-89 Package ZXTP25100CZTA
Brand: DiodesZetex
SKU: 286599
Price: 0.43 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	4.25mm
Length	4.6mm
Model	ZXTP25100CZTA
Width	1.6mm
Mount Type	Surface
Series	ZXTPX
Maximum Operating Temperature	150°C
Package Type	SOT-89
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-100V
Minimum DC Current Gain hFE	20
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-7V
Maximum Collector Base Voltage VCBO	-115V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	15.7W
Maximum DC Collector Current Idc	-1A
Transistor Configuration	Single
Maximum Transition Frequency ft	180MHz

Key Features

This transistor supports a maximum collector base voltage of 115 V and maximum power dissipation of 15.7 W.
The device features a transition frequency of 180 MHz suitable for high-frequency applications.
Minimum DC current gain is 20, enabling proper amplification performance.
Operating temperature range is from -55°C to 150°C for reliable use under harsh conditions.
Designed for surface mount technology with a compact 4.6 mm length, 1.6 mm width, and 4.25 mm height dimensions.
The product conforms to automotive standard AEC-Q101, ensuring suitability for automotive electronics.
It is a single transistor configuration with PNP polarity.

Product Description

DiodesZetex ZXTP25100CZTA PNP Bipolar Transistor is designed for electronic circuit applications demanding up to 1 A collector current and a maximum voltage of 100 V across collector-emitter junction. The transistor is housed in a compact 3-Pin SOT-89 package suitable for surface mounting on printed circuit boards.

This single transistor device features a maximum collector base voltage rating of 115 V and can dissipate power up to 15.7 W. Its transition frequency of 180 MHz makes it ideal for high-frequency signal amplification and switching circuits.

The minimum DC current gain (hFE) of 20 ensures reliable amplification characteristics, while the transistor’s emitter-base voltage maximum of 7 V and operating temperature range from -55°C to 150°C enable robust performance in automotive and industrial environments.

With package dimensions of length 4.6 mm, width 1.6 mm, and height 4.25 mm, the transistor fits compact electronic assemblies. Its compliance with automotive standard AEC-Q101 confirms suitability for use in automotive electronic systems requiring high reliability.

This transistor supports up to 1 A collector current and 100 V collector-emitter voltage. It offers a maximum power dissipation capability of 15.7 W for enhanced thermal management. Its frequency response of 180 MHz suits it for switching and amplification at RF and intermediate frequencies.

The device operates reliably within a wide temperature range from -55°C to 150°C. Packaged in SOT-89, it supports surface mount installation on PCBs. Automotive standard compliance (AEC-Q101) ensures high-quality automotive applications.

Single, PNP transistor configuration designed for general-purpose electronic circuits.

This component is widely used in industrial, automotive, and consumer electronics for amplification, switching, and signal processing tasks. It offers a reliable solution for designers seeking robust PNP bipolar transistors with moderate power handling and high-frequency capabilities.

Explore more high-quality semiconductor components under Bipolar Transistors at EnvMart for your industrial and commercial electronic design projects.