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STMicroelectronics MDmesh N-Channel MOSFET 1.5 kV 4 A Enhancement Mode TO-247 3-Pin STW4N150
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW4N150 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 1.5kV |
| Maximum Drain Source Resistance Rds | 7Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 2V |
Key Features
- MDmesh series device designed for high voltage applications.
- Enhancement mode channel for efficient switching.
- Surpasses with a maximum power dissipation of 160 W.
- Packaged in 3-Pin TO-247 for through hole mounting.
- Operates reliably up to 150°C maximum temperature.
- Minimum operating temperature is -55°C, suitable for harsh environments.
- Maximum gate-source voltage rating of -30 V to +30 V for robustness.
- Typical gate charge of 30 nC supports fast switching speeds.
Product Description
STMicroelectronics STW4N150 is a high-performance MDmesh N-Channel MOSFET designed for power switching applications requiring high voltage and current capability. Featuring a maximum continuous drain current of 4 A and a drain-source voltage rating of 1.5 kV, this enhancement mode device is capable of efficient and reliable operation in industrial, automotive, and power management circuits.
The device uses MDmesh technology to deliver low on-resistance and fast switching characteristics, enhancing overall system efficiency. Its robust package type, TO-247, with 3 pins, supports through-hole mounting for easy assembly on power boards and modules.
Key electrical features include a maximum power dissipation rating of 160 W and wide operating temperature range from -55°C to 150°C, making the STW4N150 suitable for demanding environments requiring thermal resilience. The maximum gate-source voltage is rated between -30 V to +30 V, providing strong immunity to voltage spikes.
The MOSFET has a typical gate charge of 30 nC and a forward voltage of 2 V, contributing to fast switching and low conduction losses. The physical package dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height enable compact system design. This component finds use in industrial electronics, power supplies, inverter circuits, and other applications necessitating a reliable high-voltage MOSFET.
MDmesh N-Channel enhancement mode technology for efficient power management. High voltage rating of 1.5 kV suitable for industrial and automotive systems. Robust TO-247 through-hole package facilitates integration into power electronics.
Wide temperature range supports harsh environment operation. Low gate charge and forward voltage enable fast switching and efficiency. Compact physical dimensions support space-saving designs.
This MOSFET is a dependable choice for engineers seeking a rugged, high-voltage transistor with balanced performance for a variety of power electronics projects. Browse additional STMicroelectronics power semiconductors on EnvMart for complete solutions.
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Frequently Asked Questions
The maximum continuous drain current for the STW4N150 is 4 A.
This model has a maximum drain-source voltage rating of 1.5 kV.
The STW4N150 is packaged in a TO-247 type, which supports through-hole mounting.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum power dissipation for this model is rated at 160 W.
The typical gate charge for the STW4N150 is 30 nC.
The maximum gate-source voltage rating is between -30 V and +30 V.
The dimensions are 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
This model features an N-channel enhancement mode.
It is suitable for power switching applications in industrial, automotive, and power management circuits.
The forward voltage for this MOSFET is 2 V.
The TO-247 package of the STW4N150 has 3 pins.
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