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STMicroelectronics MDmesh M5 N-Channel MOSFET, 33 A Continuous Drain Current, 650 V Drain Source Voltage, 190 W STW42N65M5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW42N65M5 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 79mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 100nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- The MDmesh M5 series provides optimized performance for power factor correction and PWM topologies.
- Featuring low on-state losses per silicon area, this MOSFET ensures energy efficient and compact design.
- The device comes in a 3-pin TO-247 package with through-hole mount.
- Maximum power dissipation rated at 190 W enables reliable operation in demanding conditions.
- Operating temperature range extends from -55°C to 150°C for industrial applications.
- Low gate charge of 100 nC enhances switching speed and reduces drive power requirements.
- Maximum drain-source resistance of 79 mΩ ensures low conduction losses.
- Designed for enhancement mode operation with maximum gate-source voltage of -25 V to +25 V.
Product Description
STMicroelectronics STW42N65M5 is a high-performance N-channel MDmesh™ M5 MOSFET designed for industrial and commercial power electronics applications. It offers a continuous drain current of 33 A and a drain-source voltage rating of 650 V, providing robust operation under high voltage and current conditions.
The device is packaged in a 3-pin TO-247 form factor, suitable for through-hole mounting, making it ideal for power supply and conversion systems requiring efficient thermal management.
With a maximum power dissipation of 190 W and low on-state resistance of 79 mΩ, this MOSFET delivers efficient conduction and switching performance. Its low gate charge of 100 nC ensures quick switching, reducing power losses in PWM and power factor correction circuits.
Operating temperature ranges from -55°C to 150°C enable the STW42N65M5 to perform reliably in harsh industrial environments. The device’s gate-source voltage window of -25 V to +25 V and forward voltage of 1.5 V support stable control in electronic lighting, solar power conversion, and consumer electronics power supplies.
This MOSFET is optimized for energy-conscious, compact, and reliable hard switching applications such as solar power converters, electronic lighting controls, and power supplies for consumer products.
The MDmesh M5 design optimizes silicon area for reduced losses and higher efficiency. Its robust package ensures effective heat dissipation during high power operation. Industrial-grade reliability and performance for power electronics design.
Compatible with typical power factor correction and PWM converter topologies. Suitable for laboratory, industrial manufacturing, HVAC, and renewable energy systems. Explore the Electronics & Electricals category on EnvMart for a wide range of semiconductors and Power MOSFETs from STMicroelectronics and other leading manufacturers.
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Frequently Asked Questions
The STW42N65M5 has a maximum continuous drain current of 33 A.
It has a drain-source voltage rating of 650 V, making it suitable for high voltage applications.
The maximum power dissipation for this MOSFET is rated at 190 W.
This model comes in a TO-247 package type, designed for through-hole mounting.
The operating temperature range extends from -55°C to 150°C, suitable for industrial applications.
The maximum gate-source voltage for this model is -25 V to +25 V.
The typical gate charge is 100 nC, which enhances switching speed and reduces drive power requirements.
The maximum drain-source resistance is 79 mΩ, ensuring low conduction losses.
This MOSFET features a 3-pin configuration.
The STW42N65M5 is an N-channel MOSFET, designed for enhancement mode operation.
This model is optimized for applications such as solar power converters, electronic lighting controls, and power supplies for consumer products.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
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