STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 14A 500V Enhancement 3-Pin TO-247 STW14NK50Z

STMicroelectronics STW14NK50Z MDmesh SuperMESH N-Channel MOSFET is a high-performance enhancement mode transistor designed to handle a maximum continuous drain current of 14 amperes and withstand voltages up to 500 volts between drain and source. Encapsulated in a 3-pin TO-247 package, it is engineered for through-hole mounting on printed circuit boards.

This MOSFET features low drain-source resistance of 380 milliohms, which minimizes conduction losses and improves power efficiency in switching operations. The device can dissipate power up to 150 watts, making it suitable for robust industrial and commercial power management applications.

It operates reliably within a temperature range spanning from a minimum of -55°C to a maximum of 150°C, assuring durability and performance in demanding thermal conditions. The gate characteristics include a typical charge of 69 nanocoulombs at a gate-source voltage of 10 volts, providing swift switching responses while maintaining control stability within a maximum gate-source voltage rating of -30 to +30 volts.

The MOSFET exhibits a forward voltage drop of 1.6 volts, facilitating efficient conduction with minimal voltage loss. Its compact physical dimensions, measuring 20.15mm in height, 15.75mm in length, and 5.15mm in width, ensure efficient space utilization on the PCB.

Common industrial uses include power supplies, motor control circuits, electronic ballasts, and other applications requiring reliable high voltage and current switching. Due to the absence of automotive standard compliance, it is primarily targeted toward industrial and commercial sectors.

This device features an enhancement mode channel for efficient switching performance. It has a low maximum drain-source resistance of 380 milliohms for minimal power loss. The MOSFET supports a maximum power dissipation of 150 watts suitable for high power applications.

Operating temperature ranges from -55°C to 150°C, enabling use in harsh environments. Its typical gate charge of 69 nanocoulombs provides fast switching capabilities. The device accepts gate-source voltages from -30V to +30V for robust gate control.

Forward voltage is rated at 1.6 volts ensuring efficient current flow during conduction. Compact dimensions of 20.15mm height, 15.75mm length, and 5.15mm width optimize space usage on circuit boards. The component mounts through hole style facilitating secure installation.

Designed without automotive standards, it is suitable for industrial and commercial electronics.

This MOSFET is an ideal choice for applications in industrial power management, manufacturing equipment, HVAC systems, and other heavy-duty electronics requiring reliable high-power switching components. Explore more STMicroelectronics power transistor products on EnvMart for a wide range of advanced semiconductor solutions.