STMicroelectronics DM6 N-Channel Power MOSFET 33A 650V Enhancement Mode 3-Pin TO-247 STW50N65DM6

STMicroelectronics STW50N65DM6 is a high-voltage N-channel Power MOSFET designed for demanding industrial and electronic applications. With a maximum continuous drain current of 33 amperes and a drain-source voltage rating of 650 volts, it provides robust and efficient switching capabilities.

This device features enhancement mode operation, low on-resistance of 91 milliohms, and a power dissipation capacity of 250 watts, making it suitable for high power applications. Packaged in a TO-247 3-pin form factor, it supports through-hole mounting for easy integration in electronic assemblies.

Designed for reliable performance, this MOSFET operates effectively in temperatures ranging from -55°C to 175°C and offers a typical gate charge of 52.5 nanocoulombs to ensure fast switching. It is avalanche tested and provides extremely high dv/dt ruggedness, increasing operational durability.

Its fast recovery body diode and low recovery charge contribute to excellent switching characteristics, reducing power losses in converters, phase-shift topologies, and power management systems.

Applications include industrial power electronics, semiconductors for electronic components, power supplies, and other demanding environments requiring high efficiency and reliability.

Features enhancement-mode operation for effective switching. Maximum continuous drain current of 33 amperes ensures robust performance. 650 volts drain-source voltage for high voltage tolerance. Low on-resistance of 91 milliohms reduces energy loss during operation.

Packaged in a durable 3-pin TO-247 form factor suitable for through-hole mounting. Supports maximum power dissipation up to 250 watts for intensive use. Wide operating temperature range from -55°C to 175°C for reliability in harsh environments.

Typical gate charge of 52.5 nanocoulombs facilitates fast switching behavior. Extremely rugged with high dv/dt capability and avalanche tested for durability. Ideal for industrial, power management, and high-efficiency bridge topologies.

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