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STMicroelectronics ST N-Channel MOSFET 52A 600V Depletion Mode 3-Pin TO-247 STWA67N60M6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 41.2mm |
| Length | 15.9mm |
| Model | STWA67N60M6 |
| Width | 5.1mm |
| Mount Type | Through Hole |
| Series | ST |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.045Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 330W |
| Typical Gate Charge Qg @ Vgs | 72.5nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- The device operates in depletion mode with a maximum gate-source voltage of 25V.
- Maximum drain-source resistance is 0.045 Ohm, ensuring efficient conduction.
- It has a maximum power dissipation rating of 330W and a forward voltage of 1.6V.
- The MOSFET is constructed using the advanced MDmesh™ M6 technology providing improved avalanche capability and Zener protection.
- Operating temperature ranges from -55°C to 150°C making it suitable for industrial and automotive applications.
- The compact package dimensions are 15.9mm length, 41.2mm height, and 5.1mm width.
- This MOSFET is ideal for power switching and amplification in electronic circuits.
Product Description
STMicroelectronics STWA67N60M6 is a high-performance N-Channel MOSFET designed for power applications requiring a maximum continuous drain current of 52A and a maximum drain-source voltage of 600V. It is housed in a 3-pin TO-247 through-hole package suitable for robust industrial, automotive, and electronic circuit implementations.
Built using the MDmesh™ M6 technology, this device offers enhanced avalanche ruggedness and includes Zener protection for reliable operation under demanding conditions. The depletion mode channel allows for efficient control of the device with a maximum gate-source voltage rating of 25V and a typical gate charge of 72.5nC.
The MOSFET exhibits a low maximum drain-source resistance of 0.045 Ohm which contributes to minimized power losses. It has a maximum power dissipation of 330W and a forward voltage drop of 1.6V, optimizing efficiency in switching and amplification roles.
Its operating temperature range from -55°C to 150°C makes it suitable for use in harsh environments and ensures durability in automotive and industrial electronics. The compact physical dimensions (15.9mm length, 41.2mm height, and 5.1mm width) make the STWA67N60M6 compatible for installation in diverse PCB layouts.
The device uses advanced MDmesh™ M6 technology providing enhanced avalanche tolerance and Zener protection. N-Channel depletion mode operation with high current handling capability. Maximum continuous drain current: 52A at 600V drain-source voltage.
Low maximum drain-source on-resistance of 0.045 Ohm. High power dissipation rating of 330W supports heavy-duty applications. Wide operating temperature range from -55°C to 150°C for reliable performance. 3-pin TO-247 through-hole package for ease of mounting and thermal management.
This STMicroelectronics MOSFET is widely used in power management, motor control, and industrial switch applications requiring a reliable and efficient semiconductor component. Browse EnvMart’s Electronics & Electricals category for more semiconductor devices and power components with technical datasheets and application guides.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STWA67N60M6 is 52A.
This model has a maximum drain-source voltage rating of 600V.
The maximum power dissipation rating of this MOSFET is 330W.
It has a low maximum drain-source resistance of 0.045 Ohm, which helps minimize power losses.
The compact package dimensions are 15.9mm in length, 41.2mm in height, and 5.1mm in width.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
This model uses an N-Channel depletion mode channel, allowing for efficient control.
The maximum gate-source voltage is rated at 25V.
It is suitable for power switching, amplification, motor control, and industrial switch applications.
The typical gate charge at a gate-source voltage is 72.5nC.
This MOSFET uses a through-hole mounting type, which facilitates easy installation.
It is constructed using advanced MDmesh™ M6 technology, which provides improved avalanche capability and Zener protection.
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