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STMicroelectronics ST N-Channel MOSFET 15A 600V Depletion Mode 3-Pin TO-220 STF22N60M6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 30.6mm |
| Length | 10.4mm |
| Model | STF22N60M6 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | ST |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.196Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features low gate input resistance for efficient switching.
- 100% avalanche tested ensuring reliability under transient conditions.
- Zener-protected gate for enhanced device safety.
- Maximum power dissipation rating of 30 Watts supports high load applications.
- Wide operating temperature range from -55°C up to 150°C for industrial environments.
- Package dimensions suitable for through-hole mounting in TO-220 format.
- Typical gate charge of 20 nC at Vgs for fast switching performance.
- Maximum drain-source resistance of 0.196 Ohms minimizing conduction losses.
Product Description
STMicroelectronics STF22N60M6 is an N-Channel MOSFET designed for power electronics applications with a maximum continuous drain current of 15 Amps and a drain-source voltage rating of 600 Volts. Housed in a 3-pin TO-220 package with through-hole mounting, it employs MDmesh™ M6 technology offering low gate input resistance and enhanced avalanche robustness.
This depletion mode MOSFET is ideal for industrial power switching, motor control, and power conversion circuits requiring reliable high voltage and high current operation. The device supports a maximum power dissipation of 30 Watts and features a typical gate charge of 20 nanoCoulombs suitable for high-speed switching applications in industrial, HVAC, and manufacturing environments.
Key electrical characteristics include a maximum drain-source resistance (Rds) of 0.196 Ohms and a maximum gate-source voltage of 25V which protect the gate from overvoltage conditions. Operation is assured between -55°C and +150°C, enabling use in demanding temperature environments.
The device dimensions are 30.6 mm height, 10.4 mm length, and 4.6 mm width, fitting conventional TO-220 through-hole footprints used widely in discrete semiconductor implementations. Its gate has zener-protection, providing enhanced durability.
This MOSFET is not automotive rated but meets standard semiconductor quality levels. It is suitable for industrial power control, lab power supplies, and electronic device manufacturing applications where reliable N-channel power MOSFETs are required.
Features low gate input resistance for efficient switching. 100% avalanche tested ensuring reliability under transient conditions. Zener-protected gate for enhanced device safety. Maximum power dissipation rating of 30 Watts supports high load applications.
Wide operating temperature range from -55°C up to 150°C for industrial environments. Package dimensions suitable for through-hole mounting in TO-220 format. Typical gate charge of 20 nC at Vgs for fast switching performance.
Maximum drain-source resistance of 0.196 Ohms minimizing conduction losses. Designed as part of the MDmesh™ M6 technology series combining robustness and efficiency. Discover similar MOSFETs and other semiconductor products in the Electronics & Electricals category on EnvMart for industrial and electronic component solutions.
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Frequently Asked Questions
The STF22N60M6 has a maximum continuous drain current rating of 15 Amps.
This model has a maximum drain-source voltage rating of 600 Volts.
The typical gate charge for the STF22N60M6 at Vgs is 20 nanoCoulombs.
The maximum power dissipation rating for this MOSFET is 30 Watts.
The package dimensions are 30.6 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum drain-source resistance (Rds) is 0.196 Ohms, which minimizes conduction losses.
It operates within a wide temperature range from -55°C to +150°C.
This MOSFET is designed for through-hole mounting in a TO-220 package.
The maximum gate-source voltage for this device is 25 Volts.
It is suitable for industrial power switching, motor control, and power conversion circuits.
This model employs MDmesh™ M6 technology, which offers low gate input resistance and enhanced avalanche robustness.
No, this MOSFET is not automotive rated but meets standard semiconductor quality levels.
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