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STMicroelectronics STripFET II N-Channel MOSFET 50 A 60 V Enhancement 3-Pin TO-220 STP55NF06

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STP55NF06
Width 4.6mm
Mount Type Through Hole
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 50A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 18mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 44.5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • The device features ultra-low gate charge ensuring fast switching and low losses.
  • It supports a maximum power dissipation of 110 W for demanding applications.
  • Operates in enhancement mode with a maximum drain-source resistance of 18 milliohms.
  • Designed for through-hole mounting in robust electronic circuits.
  • Temperature operation range spans from -55°C to 175°C for versatile performance.
  • Typical gate charge at Vgs is 44.5 nanocoulombs improving efficiency.
  • Maximum gate-source voltage tolerance of ±20 V ensures reliability.
  • Compact dimensions with length 10.4 mm, width 4.6 mm, height 9.15 mm optimize PCB space.

Product Description

STMicroelectronics STP55NF06 is a N-Channel STripFET II MOSFET designed for power electronics applications requiring high current handling and efficient switching, rated for 50 A continuous drain current and 60 V maximum drain-source voltage. It features enhancement channel mode with ultra-low gate charge and a very low on-resistance, making it suitable for power management systems, motor controls, and industrial automation equipment.

The transistor uses a 3-pin TO-220 through-hole package, ensuring easy mounting and effective heat dissipation with a maximum power dissipation of 110 W. Its operating temperature range from -55°C to 175°C allows operation in harsh environments without performance degradation.

This device includes a typical gate charge of 44.5 nC at the gate-source voltage, supporting rapid gate switching and minimizing power loss during operation. The maximum gate-source voltage tolerance of ±20 V ensures robustness against voltage spikes encountered in industrial circuits.

The compact dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height optimize PCB layout and integration in systems where space is critical. The maximum drain-source resistance of 18 milliohms further reduces conduction losses enhancing overall efficiency.

STP55NF06 is ideal for use in power supplies, automotive electronics, consumer appliances, and digital circuits requiring reliable and high-efficiency power switching components. The device features ultra-low gate charge ensuring fast switching and low losses.

It supports a maximum power dissipation of 110 W for demanding applications. Operates in enhancement mode with a maximum drain-source resistance of 18 milliohms. Designed for through-hole mounting in robust electronic circuits.

Temperature operation range spans from -55°C to 175°C for versatile performance. Typical gate charge at Vgs is 44.5 nanocoulombs improving efficiency. Maximum gate-source voltage tolerance of ±20 V ensures reliability. Compact dimensions with length 10.4 mm, width 4.6 mm, height 9.15 mm optimize PCB space.

Ideal for applications demanding efficient power switching and amplification. Explore more STMicroelectronics discrete semiconductor components and MOSFETs at EnvMart for your industrial, automotive, and power electronics design needs.

STMicroelectronics STripFET II N-Channel MOSFET 50 A 60 V Enhancement 3-Pin TO-220 STP55NF06
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Frequently Asked Questions

The maximum continuous drain current for this model is 50 A.

The maximum drain-source voltage is 60 V.

The typical gate charge at Vgs is 44.5 nanocoulombs (nC).

It supports a maximum power dissipation of 110 W.

The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.

The maximum gate-source voltage tolerance is ±20 V.

The maximum drain-source resistance is 18 milliohms (mΩ).

The operating temperature range spans from -55°C to 175°C.

This model uses a TO-220 package type for through-hole mounting.

It features an N-Channel configuration.

The pin count for this MOSFET is 3.

This model belongs to the STripFET II series.

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