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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP55NF06 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 44.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STP55NF06 is a N-Channel STripFET II MOSFET designed for power electronics applications requiring high current handling and efficient switching, rated for 50 A continuous drain current and 60 V maximum drain-source voltage. It features enhancement channel mode with ultra-low gate charge and a very low on-resistance, making it suitable for power management systems, motor controls, and industrial automation equipment.
The transistor uses a 3-pin TO-220 through-hole package, ensuring easy mounting and effective heat dissipation with a maximum power dissipation of 110 W. Its operating temperature range from -55°C to 175°C allows operation in harsh environments without performance degradation.
This device includes a typical gate charge of 44.5 nC at the gate-source voltage, supporting rapid gate switching and minimizing power loss during operation. The maximum gate-source voltage tolerance of ±20 V ensures robustness against voltage spikes encountered in industrial circuits.
The compact dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height optimize PCB layout and integration in systems where space is critical. The maximum drain-source resistance of 18 milliohms further reduces conduction losses enhancing overall efficiency.
STP55NF06 is ideal for use in power supplies, automotive electronics, consumer appliances, and digital circuits requiring reliable and high-efficiency power switching components. The device features ultra-low gate charge ensuring fast switching and low losses.
It supports a maximum power dissipation of 110 W for demanding applications. Operates in enhancement mode with a maximum drain-source resistance of 18 milliohms. Designed for through-hole mounting in robust electronic circuits.
Temperature operation range spans from -55°C to 175°C for versatile performance. Typical gate charge at Vgs is 44.5 nanocoulombs improving efficiency. Maximum gate-source voltage tolerance of ±20 V ensures reliability. Compact dimensions with length 10.4 mm, width 4.6 mm, height 9.15 mm optimize PCB space.
Ideal for applications demanding efficient power switching and amplification. Explore more STMicroelectronics discrete semiconductor components and MOSFETs at EnvMart for your industrial, automotive, and power electronics design needs.
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