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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 9A 400V Enhancement 3-Pin TO-220 STP11NK40ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STP11NK40ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features a 3-pin through hole mount configuration for easy PCB assembly.
- Offers a maximum power dissipation of 30W for reliable operation.
- Enhancement mode channel with 550mΩ maximum drain-source resistance (Rds).
- Supports gate-source voltage from -30V to +30V for flexibility in drive circuits.
- Typical gate charge of 32nC at Vgs for efficient switching performance.
- Operates in a temperature range from -55°C to +150°C for industrial applications.
- Forward voltage of 1.6V ensuring low conduction losses.
Product Description
STMicroelectronics STP11NK40ZFP is a high-performance MDmesh SuperMESH N-Channel MOSFET designed for power electronics applications requiring up to 9 amperes continuous drain current and 400 volts drain-source voltage. Packaged in a 3-pin TO-220 through hole format, this MOSFET offers robust enhancement mode switching characteristics suitable for industrial, automotive, and consumer electronics.
This device supports a maximum power dissipation of 30 watts, making it ideal for medium power switching tasks. The maximum drain-source resistance of 550 milliohms ensures low conduction losses, while the typical gate charge of 32 nanocoulombs at the gate-source voltage ensures efficient control and switching speed. The MOSFET operates over a broad temperature range from -55°C up to +150°C, ensuring reliability in harsh environments.
Its forward voltage of 1.6 volts contributes to reduced power loss in conduction. The compact size with dimensions of 10.4mm length, 4.6mm width, and 16.4mm height supports space-saving designs in power supply modules and electronic appliances.
Applications include power management circuits, motor control, power inverters, and switching regulators in industrial, laboratory, HVAC, and manufacturing environments. The through hole mount type facilitates easy replacement and prototyping on printed circuit boards.
Features a 3-pin through hole mount configuration for easy PCB assembly. Supports up to 9A maximum continuous drain current. Offers a 400V maximum drain-source voltage suitable for high voltage applications. Enhancement mode with low Rds(ON) for efficient power control.
Designed to operate across a wide thermal range of -55°C to 150°C. Compact TO-220 package dimensions suitable for various board layouts. Typical gate charge of 32nC ensures fast switching capabilities. Maximum power dissipation of 30W for robust usage scenarios.
STMicroelectronics continues to support power electronics innovations with this MDmesh SuperMESH series MOSFET, combining high performance and reliability. Explore similar semiconductor and MOSFET solutions in the Industrial Electronics category on EnvMart for tailored power management needs.
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Frequently Asked Questions
The STP11NK40ZFP MOSFET supports a maximum continuous drain current of 9A.
This model has a maximum drain-source voltage rating of 400V, making it suitable for high voltage applications.
It offers a maximum power dissipation of 30W, which is suitable for medium power switching tasks.
The typical gate charge for this model at the gate-source voltage is 32nC, ensuring efficient switching performance.
The dimensions of the TO-220 package are 10.4mm in length, 4.6mm in width, and 16.4mm in height.
It features a maximum drain-source resistance of 550mΩ, which helps in reducing conduction losses.
This model operates within a temperature range of -55°C to +150°C, making it suitable for industrial applications.
The STP11NK40ZFP uses a through hole mount configuration, facilitating easy PCB assembly and replacement.
The forward voltage of this device is 1.6V, contributing to low conduction losses.
It supports a gate-source voltage range from -30V to +30V, providing flexibility in drive circuits.
This model is suitable for power management circuits, motor control, power inverters, and switching regulators in various environments.
The STP11NK40ZFP is an N-channel MOSFET, designed for enhancement mode operation.
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