STMicroelectronics STripFET N-Channel MOSFET 200 V 9 A Enhancement Mode 75 W TO-220 IRF630

STMicroelectronics IRF630 STripFET N-Channel MOSFET is a high-performance transistor designed for power switching with a maximum continuous drain current of 9 A and a drain-source voltage rating of 200 V. Featuring enhancement mode operation, it provides efficient control of electronic loads in industrial, consumer electronics, and power management applications.

This device is housed in a 3-pin TO-220 package, allowing easy through-hole mounting on printed circuit boards. It offers a maximum power dissipation of 75 W, making it suitable for robust thermal environments with operational temperature spanning from -65°C to 150°C, ensuring reliable functionality in harsh conditions.

The MOSFET features a low maximum drain-source resistance of 400 mΩ, contributing to reduced conduction losses. Its typical gate charge of 31 nC at Vgs enables high-speed switching essential in applications such as motor drives, power supplies, and lighting controls. The forward voltage of 1.5 V supports efficient power conversion.

Its gate-source voltage maximum rating of ±20 V ensures protection against voltage spikes. Compact physical size with dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height enhances design flexibility in electronic circuits.

Common industrial uses include power electronics, motor control, power supplies, and electronic switching. The device is suitable for industrial automation, HVAC systems, manufacturing equipment, and other commercial electronic systems requiring robust and efficient transistor performance.

Supports maximum power dissipation of 75 W for robust thermal handling. Packaged in a 3-pin TO-220 format for standard through-hole mounting. Maximum drain-source resistance of 400 mΩ ensures efficient conductivity. Operational temperature range from -65°C up to 150°C suits demanding environments.

Typical gate charge of 31 nC at Vgs enables fast switching performance. Forward voltage is 1.5 V, optimized for power switching applications. Channel mode is enhancement type, delivering stable transistor behavior. Maximum gate-source voltage rating is ±20 V for gate protection.

Compact dimensions: length 10.4 mm, width 4.6 mm, height 9.15 mm. Explore more STMicroelectronics MOSFETs and discrete semiconductor solutions at EnvMart for your power management and electronic component needs.