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STMicroelectronics STripFET F7 N-Channel MOSFET, 80 A, 60 V, Enhancement, 3-Pin TO-220 STP140N6F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP140N6F7 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET F7 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 158W |
| Typical Gate Charge Qg @ Vgs | 55nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Equipped with 3-pin TO-220 package for through-hole mounting.
- Features low on-state resistance of 3.5 milliohms for efficient conduction.
- Designed for high power dissipation of up to 158 watts.
- Capable of operating from -55°C to 175°C for wide temperature range applications.
- Maximum gate-source voltage rating of -20 V to +20 V provides robust gate control.
- Typical gate charge of 55 nC ensures fast switching speeds.
- Forward voltage drop of 1.2 V optimizes energy efficiency.
- Compact dimensions with length 10.4 mm, height 9.15 mm, and width 4.6 mm.
Product Description
STMicroelectronics STP140N6F7 is a N-Channel STripFET F7 series enhancement-mode MOSFET designed for efficient switching and power management. With a maximum continuous drain current of 80 A and a drain-source voltage rating of 60 V, this device offers robust performance for various industrial and electronic systems requiring high power handling capabilities. It comes in a 3-pin TO-220 package suitable for through-hole mounting, facilitating easy integration into power management circuits.
The MOSFET features a low on-resistance value of 3.5 milliohms, which reduces conduction losses and enhances device efficiency. It supports power dissipation up to 158 W, maintaining stable operation within a wide temperature range from -55°C to 175°C, making it suitable for demanding environments.
Gate voltage ratings from -20 V to +20 V and a typical gate charge of 55 nC enable fast and efficient switching characteristics, while the forward voltage drop of 1.2 V minimizes power loss during conduction. The compact size with dimensions 10.4 mm in length, 9.15 mm in height, and 4.6 mm width supports space-constrained PCB designs.
This MOSFET is ideal for use in power control, automotive electronics, industrial automation, and general-purpose switching applications in discrete semiconductor circuits. Its design focuses on delivering rapid switching speeds with lower gate charge and minimal internal capacitance, helping to improve overall efficiency and reduce thermal stress.
Equipped with 3-pin TO-220 package for durable mechanical support. Low Rds(on) of 3.5mΩ enables high efficiency and reduced power loss. High current capability supports demanding industrial loads. Wide operating temperature range ensures reliability under harsh conditions.
Designed for fast switching in power management circuits. Compact footprint suits various industrial designs. Suitable for enhancement-mode applications requiring robust switching. Forward voltage of 1.2 V aids in energy savings.
STripFET F7 technology optimizes capacitance and gate charge. Explore more high-performance MOSFETs and semiconductor components in our Electronics & Electricals section at EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
It comes in a 3-pin TO-220 package suitable for through-hole mounting.
The on-resistance value is 3.5 milliohms, which helps reduce conduction losses.
This unit operates within a temperature range of -55°C to 175°C.
It supports a maximum power dissipation of up to 158 watts.
The typical gate charge is 55 nC, enabling fast switching speeds.
The forward voltage drop is 1.2 V, which optimizes energy efficiency.
This model features an N-channel design, suitable for enhancement mode applications.
The dimensions are 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum gate-source voltage rating is from -20 V to +20 V.
It is suitable for power control, automotive electronics, industrial automation, and general-purpose switching applications.
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