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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 2.2 A 1 kV Enhancement 3-Pin TO-252 STD4NK100Z

Category MOSFETs Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD4NK100Z
Width 6.2mm
Mount Type Surface
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 2.2A
Maximum Drain Source Voltage Vds 1kV
Maximum Drain Source Resistance Rds 6.8Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 90W
Typical Gate Charge Qg @ Vgs 18nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • Features an N-Channel enhancement mode design for reliable switching.
  • Supports a maximum continuous drain current of 2.2 A.
  • Operates up to 1 kV drain-source voltage with low resistance of 6.8 Ω.
  • Includes a 3-pin TO-252 surface-mount package for easy PCB integration.
  • Maximum power dissipation of 90 W suitable for high performance use.
  • Wide operating temperature range from -55°C to 150°C for various environments.
  • Complies with automotive standard AEC-Q101 for quality assurance.
  • Typical gate charge of 18 nC ensures efficient switching performance.

Product Description

STMicroelectronics STD4NK100Z is a high-quality MDmesh SuperMESH N-Channel MOSFET designed for efficient power management in electronic circuits. It offers a maximum continuous drain current of 2.2 A and a maximum drain-source voltage of 1 kV, making it suitable for applications requiring high voltage and current capabilities.

The device features an enhancement channel mode and is housed in a compact 3-pin TO-252 surface-mount package, measuring 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height. It supports maximum power dissipation of 90 W and operates reliably in temperatures ranging from -55°C to 150°C, ensuring robust performance in demanding industrial, automotive, and electronic applications.

Typical gate charge of 18 nC at specified gate voltage facilitates fast switch operation, reducing energy loss. The MOSFET also boasts a low maximum drain-source resistance (Rds) of 6.8 Ω, which helps improve efficiency and reduce heat generation during operation.

This MOSFET complies with automotive standard AEC-Q101, demonstrating its suitability for automotive electronics. The maximum gate-source voltage is rated from -30 V to +30 V, providing flexibility for various circuit designs.

This component is ideal for use in power conversion modules, switching power supplies, motor control circuits, and other electronic equipment requiring high-voltage switching capabilities with reliable performance.

Enhancement mode N-Channel MOSFET for switching applications. Maximum continuous drain current of 2.2 A. Drain-source voltage rating of 1 kV ensures high voltage endurance. Compact 3-pin TO-252 surface mount packaging. Power dissipation capacity up to 90 W.

Wide operating temperature range from -55°C to 150°C. Compliant with automotive quality standard AEC-Q101. Typical gate charge of 18 nC supports efficient switching. Maximum gate-source voltage range of -30 V to +30 V.

STMicroelectronics products contribute to efficient power and electrical management solutions for industrial, automotive, and electronic manufacturing sectors. Explore the STMicroelectronics range and other semiconductor components at EnvMart for your design and production needs.

Explore more products in our MOSFETs category.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 2.2 A 1 kV Enhancement 3-Pin TO-252 STD4NK100Z
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Frequently Asked Questions

The maximum continuous drain current of this model is 2.2 A.

It has a maximum drain-source voltage rating of 1 kV.

This MOSFET is housed in a 3-pin TO-252 surface-mount package.

The maximum power dissipation capacity is 90 W.

The typical gate charge is 18 nC at the specified gate voltage.

It operates within a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage is rated from -30 V to +30 V.

The maximum drain-source resistance (Rds) is 6.8 Ω.

It complies with the automotive standard AEC-Q101.

The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

This model utilizes an N-Channel enhancement mode design.

It is suitable for applications such as power conversion modules, switching power supplies, and motor control circuits.

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