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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD4NK100Z |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.2A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 6.8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STD4NK100Z is a high-quality MDmesh SuperMESH N-Channel MOSFET designed for efficient power management in electronic circuits. It offers a maximum continuous drain current of 2.2 A and a maximum drain-source voltage of 1 kV, making it suitable for applications requiring high voltage and current capabilities.
The device features an enhancement channel mode and is housed in a compact 3-pin TO-252 surface-mount package, measuring 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height. It supports maximum power dissipation of 90 W and operates reliably in temperatures ranging from -55°C to 150°C, ensuring robust performance in demanding industrial, automotive, and electronic applications.
Typical gate charge of 18 nC at specified gate voltage facilitates fast switch operation, reducing energy loss. The MOSFET also boasts a low maximum drain-source resistance (Rds) of 6.8 Ω, which helps improve efficiency and reduce heat generation during operation.
This MOSFET complies with automotive standard AEC-Q101, demonstrating its suitability for automotive electronics. The maximum gate-source voltage is rated from -30 V to +30 V, providing flexibility for various circuit designs.
This component is ideal for use in power conversion modules, switching power supplies, motor control circuits, and other electronic equipment requiring high-voltage switching capabilities with reliable performance.
Enhancement mode N-Channel MOSFET for switching applications. Maximum continuous drain current of 2.2 A. Drain-source voltage rating of 1 kV ensures high voltage endurance. Compact 3-pin TO-252 surface mount packaging. Power dissipation capacity up to 90 W.
Wide operating temperature range from -55°C to 150°C. Compliant with automotive quality standard AEC-Q101. Typical gate charge of 18 nC supports efficient switching. Maximum gate-source voltage range of -30 V to +30 V.
STMicroelectronics products contribute to efficient power and electrical management solutions for industrial, automotive, and electronic manufacturing sectors. Explore the STMicroelectronics range and other semiconductor components at EnvMart for your design and production needs.
Explore more products in our MOSFETs category.
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