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STMicroelectronics N-Channel Power MOSFET, 15 A, 600 V, Enhancement Mode, 3-Pin TO-220 STP26N60DM6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP26N60DM6 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 195mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Maximum continuous drain current of 15 A for robust power handling.
- Rated for maximum drain-source voltage of 600 V suitable for high-voltage applications.
- Provides low on-resistance of 195 milliohms to minimize conduction losses.
- Features fast recovery diode technology for improved switching performance.
- Package type is 3-pin TO-220, ideal for through-hole mounting.
- Maximum power dissipation rating of 110 W allows for effective heat management.
- Designed with enhancement mode channel operation for efficient control.
- Operational temperature range from -55°C to 150°C for extreme environment stability.
Product Description
STMicroelectronics STP26N60DM6 is a high-voltage N-Channel Power MOSFET designed for demanding industrial and electronic applications requiring efficient switching and high reliability. It supports a maximum continuous drain current of 15 A and withstands drain-source voltages up to 600 V, making it suitable for power supplies, motor control, and bridge topologies.
This device features the MDmesh™ DM6 fast-recovery diode technology, which combines low recovery charge (Qrr) and recovery time (trr), greatly enhancing switching speeds and efficiency. The MOSFET boasts a very low RDS(on) of 195 milliohms per area, reducing conduction losses and increasing overall device efficiency.
The TO-220 3-pin package supports through-hole mount applications, allowing for easy integration into industrial and power management circuits. Its maximum power dissipation of 110 W enables effective thermal handling with standard heatsinks.
Additional specifications include a gate charge of 24 nC at Vgs, gate-source voltage maximum of 25 V, and a forward voltage of 1.6 V, which are optimized for fast switching and low gate drive power.
This MOSFET operates reliably in harsh temperature environments ranging from -55°C to 150°C. Its construction includes zener protection on the gate for increased ruggedness and high dv/dt tolerance, making it ideal for applications in power electronics, industrial controls, automotive electronics (non-automotive standard compliant), renewable energy systems, and advanced power converters.
Maximum continuous drain current: 15 A. Maximum drain-source voltage: 600 V. Low on-state resistance (RDS(on)): 195 mΩ. Package: TO-220, 3-pin through-hole mount. Fast recovery diode technology for efficiency. Power dissipation up to 110 W.
Operating temperature range: -55°C to 150°C. Gate charge: 24 nC at Vgs. Enhanced ruggedness with zener protection.
This STMicroelectronics STP26N60DM6 MOSFET is a reliable component for use in industrial, laboratory, construction, renewable energy, and manufacturing applications requiring high voltage and current handling with efficient switching capabilities. Browse more MOSFETs and semiconductor devices at EnvMart for your electronics design and production needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 A, allowing for robust power handling in various applications.
It is rated for a maximum drain-source voltage of 600 V, making it suitable for high-voltage applications.
The on-resistance (RDS(on)) is 195 milliohms, which helps minimize conduction losses during operation.
This MOSFET comes in a TO-220 package type, designed for through-hole mounting.
The maximum power dissipation rating for this unit is 110 W, allowing for effective heat management.
It operates reliably within a temperature range of -55°C to 150°C, suitable for extreme environments.
The typical gate charge at Vgs is 24 nC, optimized for fast switching and low gate drive power.
The maximum gate-source voltage for this MOSFET is 25 V, ensuring compatibility with various gate drive circuits.
The forward voltage (Vf) is 1.6 V, which is relevant for understanding its conduction characteristics.
This model is suitable for power supplies, motor control, bridge topologies, and various industrial applications.
It features MDmesh™ DM6 fast-recovery diode technology, which enhances switching speeds and efficiency.
This device uses an enhancement mode N-channel design, which is efficient for control applications.
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