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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.3mm |
| Length | 3.04mm |
| Model | STR2P3LLH6 |
| Width | 1.75mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350mW |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
STMicroelectronics STR2P3LLH6 is a P-Channel STripFET™ Power MOSFET designed for surface-mount applications. Rated for a maximum continuous drain current of 2 A and drain-source voltage of 30 V, it operates in enhancement mode, offering efficient switching and low on-resistance.
This device is packaged in a compact 3-pin SOT-23 form factor, widely used in modern electronics for space-constrained designs. Its low typical gate charge of 6 nC ensures fast switching times, ideal for power management and signal control in industrial, automotive, and consumer electronics applications.
The MOSFET operates reliably across a wide temperature range from -55°C to 150°C, suitable for demanding environmental conditions. With a power dissipation rating of 350 mW and forward voltage of -1.1 V, it supports moderate power levels with good energy efficiency.
Its construction using the proprietary STripFET™ technology by STMicroelectronics ensures ultra-low gate charge and low on-resistance characteristics, enhancing device performance and reducing system losses.
Typical uses include switching regulators, motor controls, load switches, and general purpose power switching in electronic circuits. The device is RoHS compliant and manufactured in China.
Type P channel with enhancement mode operation. Maximum continuous drain current: 2 A. Drain-source voltage rating: 30 V. Package: 3-pin SOT-23 surface mount. Maximum power dissipation: 350 mW. Operating temperature: -55°C to 150°C.
Typical gate charge: 6 nC. Gate-source voltage rating: ±20 V. Low on-resistance: 90 milliohms. Compact dimensions (3.04 x 1.75 x 1.3 mm).
This STMicroelectronics MOSFET provides a reliable component for industrial, automotive, manufacturing, and electronic product development requiring high efficiency and compact power transistor solutions. Explore more semiconductor components and power MOSFETs in the Electronics & Electricals category on EnvMart for your project needs.
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