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STMicroelectronics N-Channel MOSFET, 5 A, 650 V Enhancement Mode, 3-Pin IPAK Package STD5NM60T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 6.2mm |
| Length | 6.6mm |
| Model | STD5NM60T4 |
| Width | 2.4mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- The device features a maximum continuous drain current of 5 amperes and a maximum drain-source voltage of 650 volts.
- It has a low maximum drain-source resistance of 1 ohm, optimizing efficiency in switching applications.
- The package is a 3-pin IPAK type designed for through hole mount, providing reliable mechanical and electrical connection.
- Typical gate charge is low at 13 nanocoulombs, resulting in faster switching performance.
- This MOSFET supports a maximum power dissipation of 96 watts, enabling robust thermal handling.
- It operates reliably across a wide temperature range from -55°C to 150°C.
- The maximum gate-source voltage is 30 volts, with a forward voltage drop of 1.5 volts.
- Physical dimensions include a height of 6.2 mm, length of 6.6 mm, and width of 2.4 mm.
Product Description
STMicroelectronics STD5NM60T4 is a high-performance N-Channel MOSFET designed for demanding switching applications. It supports a continuous drain current of 5 A and can withstand drain-source voltages up to 650 V, making it suitable for power management in industrial electronics and semiconductor circuits.
This MOSFET utilizes the revolutionary MDmesh™ technology, which integrates a multiple drain process with the company's PowerMESH™ horizontal layout. This design achieves exceptionally low on-resistance and high dv/dt capability, as well as excellent avalanche characteristics, ensuring robust performance under high stress conditions.
The device's low input capacitance and gate charge contribute to improved switching speeds and efficiency. The typical gate charge is 13 nC at Vgs, optimizing switching losses for energy-sensitive applications. The gate input resistance is low, which helps in reducing gate drive power.
Mechanical specifications include a 3-pin IPAK through hole package with dimensions of 6.2 mm in height, 6.6 mm in length, and 2.4 mm in width, providing a compact and reliable form factor for PCB assembly.
The MOSFET's operating temperature ranges from -55°C to 150°C, ensuring suitability for harsh environmental conditions encountered in industrial, automotive, and power management contexts. The maximum power dissipation rating is 96 W, enabling effective heat management during operation.
The device is optimized for switching applications requiring high efficiency and reliability. Its low gate charge reduces switching losses and enhances overall power conversion efficiency. The robust MDmesh™ technology supports high avalanche and dv/dt stress capabilities.
Compact IPAK package supports easy mounting and integration in electronic assemblies. Broad temperature range supports use in varied industrial environments.
This N-Channel MOSFET is ideal for industrial power supplies, motor drives, and energy management systems. Its advanced design and low on-resistance offer an excellent balance of performance and thermal stability, making it a preferred choice for power switching components.
Explore the STMicroelectronics product range on EnvMart for a comprehensive selection of reliable semiconductor devices supporting your industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5 amperes.
It can withstand a maximum drain-source voltage of 650 volts.
The typical gate charge for this MOSFET is 13 nanocoulombs.
The IPAK package has dimensions of 6.2 mm in height, 6.6 mm in length, and 2.4 mm in width.
The maximum power dissipation for this MOSFET is rated at 96 watts.
It operates reliably across a temperature range from -55°C to 150°C.
This model supports through-hole mounting.
The maximum gate-source voltage is 30 volts.
The forward voltage drop for this MOSFET is 1.5 volts.
The IPAK package contains 3 pins.
This device utilizes an N-channel configuration.
It utilizes MDmesh™ technology, which enhances efficiency and performance in switching applications.
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