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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.17mm |
| Length | 6.6mm |
| Model | STD8N65M5 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STD8N65M5 is an N-channel MOSFET designed for surface mount applications in compact electronics. It features a high continuous drain current rating of 7 amperes and supports a maximum drain-source voltage of 710 volts, making it suitable for high voltage switching and power management tasks.
The device utilizes enhancement mode channel operation with a low on-resistance of 600 milliohms, contributing to excellent efficiency and low conduction losses. It has a maximum gate-source voltage rating of 25 volts and a typical gate charge of 15 nanocoulombs, making it easy to drive for fast switching applications.
Thermal performance is robust with a maximum power dissipation of 70 watts and an operating temperature range from -55°C to 150°C, suitable for demanding industrial environments.
The component is packaged in a TO-252 surface mount package, with compact dimensions of 6.6 mm length, 6.2 mm width, and 2.17 mm height, helping to save board space in high-density designs.
Typical applications include high efficiency switching power supplies, motor control, automotive electronics, and industrial equipment requiring reliable power transistors with superior power density.
Maximum continuous drain current of 7A. Maximum drain-source voltage of 710V. Surface mount TO-252 package to optimize PCB layout. Low on-resistance ensures efficient power handling. Wide operating temperature range for industrial reliability.
Quick switching characteristics for power electronics. Robust power dissipation supports heavy loads. Enhancement mode channel operation for controlled switching. Compact dimensions facilitate use in space constrained designs.
Designed for automotive and industrial power applications.
This powerful STMicroelectronics MOSFET is ideal for engineers and designers working on reliable, high-performance electronic power solutions. Explore more Power MOSFETs and related semiconductor components at EnvMart.
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