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STMicroelectronics Surface Mount N-Channel MOSFET, 7 A, 710 V, Enhancement Mode, 3-Pin TO-252 STD8N65M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.17mm
Length 6.6mm
Model STD8N65M5
Width 6.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 7A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 600mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 70W
Typical Gate Charge Qg @ Vgs 15nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.5V

Key Features

  • This MOSFET features a maximum continuous drain current of 7 amperes.
  • The device supports a maximum drain-source voltage of 710 volts for high voltage applications.
  • It comes in a TO-252 surface mount package suitable for compact PCB designs.
  • Channel operates in enhancement mode with an N-type channel structure.
  • Maximum gate-source voltage rating is 25 volts for reliable gate control.
  • Offers a typical gate charge of 15 nanocoulombs at rated gate voltage for efficient switching.
  • Maximum power dissipation capacity is 70 watts ensuring good thermal handling.
  • Operational temperature range spans from -55°C to +150°C for industrial durability.

Product Description

STMicroelectronics STD8N65M5 is an N-channel MOSFET designed for surface mount applications in compact electronics. It features a high continuous drain current rating of 7 amperes and supports a maximum drain-source voltage of 710 volts, making it suitable for high voltage switching and power management tasks.

The device utilizes enhancement mode channel operation with a low on-resistance of 600 milliohms, contributing to excellent efficiency and low conduction losses. It has a maximum gate-source voltage rating of 25 volts and a typical gate charge of 15 nanocoulombs, making it easy to drive for fast switching applications.

Thermal performance is robust with a maximum power dissipation of 70 watts and an operating temperature range from -55°C to 150°C, suitable for demanding industrial environments.

The component is packaged in a TO-252 surface mount package, with compact dimensions of 6.6 mm length, 6.2 mm width, and 2.17 mm height, helping to save board space in high-density designs.

Typical applications include high efficiency switching power supplies, motor control, automotive electronics, and industrial equipment requiring reliable power transistors with superior power density.

Maximum continuous drain current of 7A. Maximum drain-source voltage of 710V. Surface mount TO-252 package to optimize PCB layout. Low on-resistance ensures efficient power handling. Wide operating temperature range for industrial reliability.

Quick switching characteristics for power electronics. Robust power dissipation supports heavy loads. Enhancement mode channel operation for controlled switching. Compact dimensions facilitate use in space constrained designs.

Designed for automotive and industrial power applications.

This powerful STMicroelectronics MOSFET is ideal for engineers and designers working on reliable, high-performance electronic power solutions. Explore more Power MOSFETs and related semiconductor components at EnvMart.

STMicroelectronics Surface Mount N-Channel MOSFET, 7 A, 710 V, Enhancement Mode, 3-Pin TO-252 STD8N65M5
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Frequently Asked Questions

The maximum continuous drain current of this model is 7 amperes.

It supports a maximum drain-source voltage of 710 volts.

This MOSFET comes in a TO-252 surface mount package.

The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height.

The operational temperature range spans from -55°C to 150°C.

It has a maximum power dissipation capacity of 70 watts.

The typical gate charge at rated gate voltage is 15 nanocoulombs.

The maximum gate-source voltage rating is 25 volts.

It operates with an N-type enhancement mode channel structure.

The maximum drain-source resistance is 600 milliohms.

This model is suitable for high efficiency switching power supplies, motor control, automotive electronics, and industrial equipment.

This MOSFET has a pin count of 3.

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