onsemi Digital Transistor 300 V PNP Through Hole TO-220 Package 40W Power Dissipation MJE5730G

onsemi MJE5730G digital transistor is a bipolar power transistor with a maximum collector emitter voltage of 300 V designed for audio output amplifiers, switch mode power supply drivers, and other switching applications. It comes in a robust TO-220 package suitable for through hole assembly.

The transistor features a single PNP configuration with a minimum DC current gain of 30 and can dissipate up to 40 watts of power safely. It supports a maximum collector base voltage of 300 V and emitter base voltage of 5 V DC.

The MJE5730G is rated for high temperature operation up to 150°C, making it reliable in demanding environments. Its compact dimensions measure 10.53 mm in length, 4.83 mm in width, and 9.28 mm in height to accommodate various circuit layouts.

This device is suitable for industrial, laboratory, commercial electronics, audio equipment, and power supply designs requiring robust transistor performance. It is also Pb-free, conforming to environmental and safety regulations.

Package contents include a single onsemi MJE5730G digital transistor in TO-220 plastic casing with 3 pins for through hole mounting. Maximum collector emitter voltage: 300 V to 400 V. 1.0 A rated collector current. Popular TO-220 plastic package.

PNP polarity suitable as complements to TIP47 through TIP50 series. Designed for switching and amplification tasks. Explore more semiconductor components and related electronics products in our Bipolar Transistors category for your industrial and commercial projects.