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onsemi Bipolar Power Transistor PNP 10 A, 60 V, TO-252 Surface Mount 3-Pin MJD2955G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Vietnam
Brand onsemi
Height 10.41mm
Length 6.73mm
Model MJD2955G
Width 2.38mm
Mount Type Surface
Series MJD2955
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 5
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 70V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc -10A
Transistor Configuration Single
Maximum Transition Frequency ft 500kHz

Key Features

  • The transistor supports maximum DC collector current of 10 amperes.
  • With a maximum collector-emitter voltage rating of 60 volts, it suits moderate voltage circuits.
  • It features a TO-252 surface mount package with 3 pins for compact PCB mounting.
  • The device offers a high maximum power dissipation of 20 watts for robust performance.
  • Operating temperature ranges from -55°C to 150°C suitable for demanding applications.
  • The transistor polarity is PNP with a single transistor configuration.
  • Maximum collector base voltage is rated at 70 volts DC.
  • Minimum DC current gain (hFE) of 5 and maximum transition frequency of 500 kHz.

Product Description

onsemi MJD2955G Bipolar Power Transistor, model MJD2955G, is a PNP transistor with a maximum DC collector current of 10 amperes and a collector-emitter voltage of 60 volts. Packaged in a TO-252 surface mount 3-pin configuration, it suits compact electronic circuit designs requiring efficient power handling.

Designed primarily for general purpose amplifier and low speed switching applications, this transistor provides reliable operation across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and electronic manufacturing environments. The device's single transistor configuration and PNP polarity support complementary half-bridge circuits when paired with the corresponding NPN transistor model MJD3055.

This transistor offers a robust maximum power dissipation of 20 watts, ensuring it can handle higher thermal loads in demanding applications. The maximum collector base voltage of 70 volts and maximum emitter base voltage of 5 volts also provide design flexibility in various electronic circuits.

With a minimum DC current gain (hFE) of 5 and a transition frequency of 500 kHz, the transistor balances gain and switching speed efficiently. Its compact dimensions of length 6.73 mm, width 2.38 mm, and height 10.41 mm facilitate space-saving PCB layouts. The transistor is compliant with Automotive Standard AEC-Q101 and uses lead-free packaging, underscoring its suitability for automotive and environmentally conscious applications.

The transistor supports maximum DC collector current of 10 amperes. It features a maximum collector-emitter voltage of 60 volts. TO-252 surface mount 3-pin package for compact assembly. High power dissipation of 20 watts for reliable operation.

Wide operating temperature range from -55°C to 150°C. Single transistor configuration and PNP polarity. Maximum collector base voltage of 70 volts DC. Minimum DC current gain of 5 and transition frequency up to 500 kHz. Automotive Standard AEC-Q101 compliant and lead-free packaging.

Compact size: 6.73 mm length, 2.38 mm width, 10.41 mm height.

This transistor is ideal for use in industrial, automotive, laboratory, and electronic manufacturing applications where reliable performance and durable switching are required. It forms a vital component in power management, signal amplification, and circuit switching tasks. Explore more semiconductor and discrete transistor options on EnvMart to find compatible devices for your projects.

Explore more products in our Bipolar Transistors category.

onsemi Bipolar Power Transistor PNP 10 A, 60 V, TO-252 Surface Mount 3-Pin MJD2955G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 10 amperes.

It has a maximum collector-emitter voltage rating of 60 volts.

This model is packaged in a TO-252 surface mount configuration with 3 pins.

The MJD2955G offers a maximum power dissipation of 20 watts.

It operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) for the MJD2955G is 5.

The maximum transition frequency is 500 kHz.

It has a maximum collector base voltage of 70 volts DC.

The dimensions are 10.41 mm in height, 2.38 mm in width, and 6.73 mm in length.

This transistor is compliant with Automotive Standard AEC-Q101.

The transistor has a PNP polarity.

It is suitable for general purpose amplifier and low speed switching applications in industrial, automotive, and electronic manufacturing environments.

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