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| Country of Origin | Vietnam |
|---|---|
| Brand | onsemi |
| Height | 10.41mm |
| Length | 6.73mm |
| Model | MJD2955G |
| Width | 2.38mm |
| Mount Type | Surface |
| Series | MJD2955 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 70V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | -10A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 500kHz |
onsemi MJD2955G Bipolar Power Transistor, model MJD2955G, is a PNP transistor with a maximum DC collector current of 10 amperes and a collector-emitter voltage of 60 volts. Packaged in a TO-252 surface mount 3-pin configuration, it suits compact electronic circuit designs requiring efficient power handling.
Designed primarily for general purpose amplifier and low speed switching applications, this transistor provides reliable operation across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and electronic manufacturing environments. The device's single transistor configuration and PNP polarity support complementary half-bridge circuits when paired with the corresponding NPN transistor model MJD3055.
This transistor offers a robust maximum power dissipation of 20 watts, ensuring it can handle higher thermal loads in demanding applications. The maximum collector base voltage of 70 volts and maximum emitter base voltage of 5 volts also provide design flexibility in various electronic circuits.
With a minimum DC current gain (hFE) of 5 and a transition frequency of 500 kHz, the transistor balances gain and switching speed efficiently. Its compact dimensions of length 6.73 mm, width 2.38 mm, and height 10.41 mm facilitate space-saving PCB layouts. The transistor is compliant with Automotive Standard AEC-Q101 and uses lead-free packaging, underscoring its suitability for automotive and environmentally conscious applications.
The transistor supports maximum DC collector current of 10 amperes. It features a maximum collector-emitter voltage of 60 volts. TO-252 surface mount 3-pin package for compact assembly. High power dissipation of 20 watts for reliable operation.
Wide operating temperature range from -55°C to 150°C. Single transistor configuration and PNP polarity. Maximum collector base voltage of 70 volts DC. Minimum DC current gain of 5 and transition frequency up to 500 kHz. Automotive Standard AEC-Q101 compliant and lead-free packaging.
Compact size: 6.73 mm length, 2.38 mm width, 10.41 mm height.
This transistor is ideal for use in industrial, automotive, laboratory, and electronic manufacturing applications where reliable performance and durable switching are required. It forms a vital component in power management, signal amplification, and circuit switching tasks. Explore more semiconductor and discrete transistor options on EnvMart to find compatible devices for your projects.
Explore more products in our Bipolar Transistors category.
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