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onsemi Single N-Channel JFET 50 mA 15 V 5-Pin MCPH Surface Mount NSVJ5908DSG5T1G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 0.83mm |
| Length | 2mm |
| Model | NSVJ5908DSG5T1G |
| Width | 1.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MCPH |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free, RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50mA |
| Maximum Drain Source Voltage Vds | 15V |
| Transistor Configuration | Single |
Key Features
- Designed for automotive applications with AEC-Q101 certification.
- Operates over a wide temperature range from -55°C to 150°C.
- Offers large forward transfer admittance and low noise figure for improved performance.
- Composite dual JFET chip in a compact MCPH5 package optimized for mounting efficiency.
- Lead-free and RoHS compliant with halogen-free construction.
- Enables low distortion and supports radio wave reception in small size devices.
- Suitable for use in AM tuner RF amplifiers and low noise amplifiers.
- High power dissipation capability for reliable operation under demanding conditions.
Product Description
onsemi NSVJ5908DSG5T1G is a single N-Channel Junction Field-Effect Transistor (JFET) designed for compact, efficient automotive electronic systems. It supports a maximum continuous drain current of 50 mA and can handle drain source voltages up to 15 V. Packaged in a 5-pin MCPH surface mount configuration, this transistor is built to meet the stringent requirements of automotive environments, including AEC-Q101 certification.
The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh conditions found in automotive applications. Featuring a composite structure of two JFET chips equivalent to NSVJ3557SA3, it provides large forward transfer admittance and low noise figure, improving signal integrity in RF and low noise amplification tasks.
This JFET is lead-free, RoHS and halogen-free compliant, aligning with environmental standards. Its construction enables low distortion, facilitating clearer reception of radio waves in compact tuner circuits. The MCPH5 package enhances mounting efficiency and real estate savings on PCBs.
Typical use cases include AM tuner RF amplifiers, low noise amplifiers, automotive antenna systems, and car tuners. Its high power dissipation capability ensures stable performance under demanding operational conditions.
Automotive-grade single N-Channel JFET with dual-chip composite design. Maximum drain current of 50 mA, with 15 V drain source voltage rating. Wide operating temperature range from -55°C to +150°C suitable for automotive environments.
Packed in a space-efficient 5-pin MCPH surface mount package. Lead-free, Pb-free, RoHS and halogen-free compliant construction. Offers low noise figure and high gain performance improving RF signal quality. Enables efficient AM tuner, low noise amplifier, and automotive antenna circuit designs.
AEC-Q101 certified for automotive reliability standards compliance. Suitable for high temperature applications and supports PPAP automotive production requirements. Explore more automotive and Discrete Semiconductor devices through EnvMart for your industrial and automotive electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the NSVJ5908DSG5T1G is 50 mA.
This model has a maximum drain-source voltage rating of 15 V.
It operates over a wide temperature range from -55°C to 150°C, making it suitable for harsh automotive environments.
The MCPH package of this JFET has 5 pins.
Yes, the NSVJ5908DSG5T1G is lead-free, RoHS compliant, and halogen-free.
It meets the AEC-Q101 automotive standard for reliability.
The dimensions of the MCPH5 package are 2 mm in length, 1.6 mm in width, and 0.83 mm in height.
It is suitable for use in AM tuner RF amplifiers, low noise amplifiers, and automotive antenna systems.
This model features a single N-Channel transistor configuration.
The composite dual JFET chip provides large forward transfer admittance and a low noise figure, improving signal integrity.
The high power dissipation capability ensures stable performance under demanding operational conditions, particularly in automotive applications.
The NSVJ5908DSG5T1G is manufactured in China.
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