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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 3.1mm |
| Model | NSM4002MR6T1G |
| Width | 3mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-74 |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 45V |
| Maximum Power Dissipation Pd | 260mW |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Complex |
| Maximum Transition Frequency ft | 300MHz |
onsemi NSM4002MR6T1G is a Complex Bipolar NPN Transistor designed for moderate power and high frequency semiconductor applications. It features a maximum DC collector current of 500 mA and a collector emitter voltage rating of 45 V, making it suitable for various electronic circuits requiring precise amplification and switching.
Packaged in a compact 6-Pin SC-74 surface mount configuration, this transistor is optimal for space-efficient circuit board layouts in industrial, electronic component manufacturing, and laboratory settings.
The device ensures a minimum DC current gain (hFE) of 40 and maximum power dissipation of 260 mW, balancing performance and thermal management. It can operate at frequencies up to 300 MHz and withstand maximum operating temperatures of 150°C, providing reliability in demanding environments.
With voltage limits of 6 V emitter base and 45 V collector base voltages, NSM4002MR6T1G maintains safe operation across a range of conditions. Its physical dimensions of 3.1 mm length, 3 mm width, and 1.1 mm height support compact integration.
This transistor is widely used in industrial control systems, electronic product manufacturing, power regulation circuits, and surface mount assembly processes due to its robust characteristics and versatile design.
Maximum DC collector current of 500 mA. Maximum collector emitter voltage of 45 V. Packaged in 6-Pin SC-74 surface mount. Minimum DC current gain of 40. Maximum power dissipation of 260 mW. Maximum transition frequency of 300 MHz.
Maximum operating temperature 150°C. Compact dimensions for PCB integration. Explore more on Bipolar Transistors by onsemi and related semiconductor components on EnvMart for your industrial, laboratory, and manufacturing needs.
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