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onsemi Bipolar Transistor PNP 3-Pin TO-220 50 V -20 A 30 W 2SA2210-1E
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Height | 28.85mm |
| Length | 10.16mm |
| Model | 2SA2210-1E |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | 2SA2210 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -50V |
| Maximum Power Dissipation Pd | 30W |
| Maximum DC Collector Current Idc | -20A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- This transistor supports through-hole mount type suitable for PCB integration.
- It has a maximum power dissipation rating of 30 W ensuring durable operation.
- The device features low collector to emitter saturation voltage and high-speed switching performance.
- Operating temperature ranges from -55°C to a maximum of 150°C for reliable performance under extreme conditions.
- Equipped with a minimum DC current gain (hFE) of 150 for efficient amplification.
- Compact dimensions of 28.85 mm height, 10.16 mm length, and 4.7 mm width in a TO-220 form factor.
- Ideal for industrial, electronic components, power supply systems, and manufacturing applications.
Product Description
onsemi 2SA2210-1E is a high-performance Bipolar PNP Transistor housed in a 3-Pin TO-220 package. It is engineered specifically for high-current switching applications, supporting a maximum DC collector current of -20 A and maximum collector emitter voltage of -50 V. This transistor features a low collector to emitter saturation voltage, ensuring energy-efficient operation within electronic circuits.
Designed for through-hole mounting, the 2SA2210-1E transistor provides robust electrical performance with a maximum power dissipation of 30 W. It operates reliably over a wide temperature range from -55°C up to 150°C, making it suitable for demanding industrial environments and thermal conditions.
Its minimum DC current gain of 150 enhances amplification efficiency in switching and amplification circuits. The transistor has physical dimensions of 28.85 mm height, 10.16 mm length, and 4.7 mm width, fitting standard TO-220 footprints commonly used in power electronic assemblies.
This transistor is ideal for use in industrial electronic components manufacturing, power supply units, instrumentation, and other applications requiring reliable high-current PNP transistors. It supports quick switching capabilities, benefiting configurations demanding rapid response.
This transistor supports through-hole mount type suitable for PCB integration. It has a maximum power dissipation rating of 30 W ensuring durable operation. The device features low collector to emitter saturation voltage and high-speed switching performance.
Operating temperature ranges from -55°C to a maximum of 150°C for reliable performance under extreme conditions. Equipped with a minimum DC current gain (hFE) of 150 for efficient amplification. Compact dimensions of 28.85 mm height, 10.16 mm length, and 4.7 mm width in a TO-220 form factor.
Ideal for industrial, electronic components, power supply systems, and manufacturing applications. Explore the full range of Bipolar Transistors on EnvMart for industrial and electronic assembly needs.
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Frequently Asked Questions
The maximum power dissipation rating of the 2SA2210-1E transistor is 30 W.
This model supports a maximum DC collector current of -20 A.
The dimensions of this transistor are 28.85 mm in height, 10.16 mm in length, and 4.7 mm in width.
It operates reliably over a temperature range from -55°C to a maximum of 150°C.
This transistor supports a through-hole mount type suitable for PCB integration.
The minimum DC current gain (hFE) for the 2SA2210-1E is 150.
The maximum collector-emitter voltage (Vceo) for this transistor is -50 V.
The package type for this transistor is TO-220.
The maximum transition frequency (ft) for this model is 1 MHz.
The maximum emitter-base voltage (VEBO) for the 2SA2210-1E is -6 V.
This transistor is ideal for use in industrial electronic components manufacturing, power supply units, and instrumentation applications.
The transistor polarity of the 2SA2210-1E is PNP.
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