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onsemi NPN Bipolar Transistor 15 A Collector Current 60 V Collector Emitter Voltage TO-220 3-Pin 2SC6082-1E
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Height | 28.85mm |
| Length | 10.16mm |
| Model | 2SC6082-1E |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | 2SC6082 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 23W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- This transistor offers high-speed switching capability.
- It features a maximum power dissipation of 23 W.
- Designed for through hole mount and has 3 pins for connection.
- It provides a minimum DC current gain (hFE) of 50.
- Operation is reliable up to a maximum temperature of 150°C.
- The transistor has low collector to emitter saturation voltage ensuring efficiency.
- Ideal for switching regulators and driver circuits.
- Manufactured in Korea, Republic Of, ensuring quality standards.
Product Description
onsemi 2SC6082-1E is an NPN bipolar transistor designed for high-speed switching applications such as switching regulators and driver circuits. It features a maximum DC collector current of 15 A and a maximum collector emitter voltage of 60 V. Packaged in a TO-220 3-pin through hole format, it supports efficient thermal management with a power dissipation rating of 23 W.
This transistor supports a minimum DC current gain (hFE) of 50, making it suitable for amplification and switching efficiency. The device operates reliably at temperatures up to 150°C, ensuring performance stability under demanding conditions. Its low collector to emitter saturation voltage enhances overall energy efficiency in circuits.
Additional applications include various industrial, electronic component, and power management circuits where reliable high-speed switching is required. The 2SC6082-1E transistor adopts the MBIT manufacturing process to deliver enhanced performance characteristics such as large current capacitance and low saturation voltage.
This transistor offers high-speed switching capability. It features a maximum power dissipation of 23 W. Designed for through hole mount and has 3 pins for connection. It provides a minimum DC current gain (hFE) of 50. Operation is reliable up to a maximum temperature of 150°C.
The transistor has low collector to emitter saturation voltage ensuring efficiency. Ideal for switching regulators and driver circuits. Manufactured in Korea, Republic Of, ensuring quality standards.
This product is suitable for industrial, manufacturing, and electronic applications requiring reliable and efficient transistor switching performance. Explore more from onsemi and similar Bipolar Transistors in the EnvMart catalog to find the best components for your technical needs.
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Frequently Asked Questions
The maximum DC collector current for the 2SC6082-1E is 15 A.
This model has a maximum collector-emitter voltage of 60 V.
The maximum power dissipation for this transistor is 23 W.
It provides a minimum DC current gain (hFE) of 50.
The transistor operates reliably at a maximum temperature of 150°C.
It is designed for through hole mounting and has 3 pins for connection.
The TO-220 package has dimensions of 28.85 mm in height, 10.16 mm in length, and 4.7 mm in width.
The maximum transition frequency (ft) is 1 MHz.
It has a maximum emitter-base voltage (VEBO) of 6 V and a maximum collector-base voltage (VCBO) of 60 V.
This transistor is ideal for high-speed switching applications, such as switching regulators and driver circuits.
The configuration of this transistor is single NPN.
It is manufactured in the Republic of Korea, ensuring quality standards.
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