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onsemi Dual NPN + PNP Bipolar Transistor 200 mA 30 V 6-Pin SOT-363 Surface Mount BC848CPDW1T1G

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onsemi Dual NPN + PNP Bipolar Transistor 200 mA 30 V 6-Pin SOT-363 Surface Mount BC848CPDW1T1G

Name: onsemi Dual NPN + PNP Bipolar Transistor 200 mA 30 V 6-Pin SOT-363 Surface Mount BC848CPDW1T1G
Brand: onsemi
SKU: 255545
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	1.1mm
Length	2.2mm
Model	BC848CPDW1T1G
Width	1.35mm
Mount Type	Surface
Series	BC848CPDW1
Maximum Operating Temperature	150°C
Package Type	SOT-363
Pin Count	6
Maximum Collector Emitter Voltage Vceo	30V
Minimum DC Current Gain hFE	420
Transistor Polarity	NPN + PNP
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	30V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	380mW
Maximum DC Collector Current Idc	200mA
Transistor Configuration	Dual
Maximum Transition Frequency ft	100MHz

Key Features

This transistor has a maximum DC collector current of 200 mA.
The maximum collector emitter voltage rating is 30 V.
It features a 6-pin SOT-363 surface mount package.
The device can operate up to a maximum frequency of 100 MHz.
Maximum power dissipation is 380 mW allowing reliable performance in compact circuits.
The transistor configuration is dual, integrating both NPN and PNP types.
It has a minimum DC current gain (hFE) of 420 for efficient amplification.
The maximum operating temperature rating is 150°C suitable for industrial and automotive use.

Product Description

onsemi BC848CPDW1T1G is a dual NPN and PNP bipolar transistor designed primarily for general purpose amplifier applications in electronic circuits. It comes in a compact 6-pin SOT-363 (SC-88) surface mount package, optimized for low power surface mount uses.

The device features a maximum DC collector current of 200 mA and can sustain collector emitter voltages up to 30 V. With a maximum operating temperature of 150°C, this transistor is suitable for demanding environments including industrial control and automotive electronics.

The minimum DC current gain (hFE) rating of 420 ensures effective signal amplification, while the maximum transition frequency of 100 MHz makes it suitable for moderately high frequency applications. Maximum power dissipation is 380 mW, supporting reliable operation within compact circuit designs.

The dual transistor configuration contains both NPN and PNP types, allowing versatile circuit implementations such as push-pull amplifiers and complementary switching designs. The product complies with AEC-Q101 automotive standards and is Pb-free, aligning with environmental regulations.

Package dimensions measure 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, providing a small footprint for dense PCB layouts. The surface mount package facilitates automated assembly in manufacturing.

This transistor supports general purpose amplifier applications. Maximum collector current: 200 mA. Maximum collector emitter voltage: 30 V. Dual NPN + PNP transistor configuration. High current gain (min hFE 420) for effective amplification.

Maximum frequency of 100 MHz for signal processing. Safe operating temperature up to 150°C for industrial/automotive use. Compact 6-pin SOT-363 surface mount package. Compliance with AEC-Q101 automotive standard. Lead-free and halogen-free construction.

This transistor is ideal for electronics manufacturing, automotive electronics, and various industrial control and communication applications. It supports high reliability and miniaturized design requirements.

Explore the extensive onsemi product range for semiconductor components with proven performance and quality on EnvMart.

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