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Nexperia Low Saturation Voltage PNP Bipolar Transistor, 4-Pin SOT-223, -4.9 A DC Collector Current, -30 V PBSS4032PZ,115
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | PBSS4032PZ,115 |
| Width | 7.3mm |
| Mount Type | Surface |
| Series | PBSS4032PZ |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -30V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -30V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | -4.9A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- This transistor supports a maximum DC collector current of -4.9 A.
- Maximum collector emitter voltage rating is -30 V, ensuring suitability for medium voltage circuits.
- The transistor has a 4-pin SOT-223 package for surface mount assembly.
- It offers a minimum DC current gain (hFE) of 60, contributing to efficient amplification.
- Designed to operate in a temperature range from -65°C to 150°C, making it reliable in varied environments.
- Maximum power dissipation is 2 W, ensuring low loss operation in switching and digital applications.
- Transistor polarity is PNP with single configuration suitable for switching and amplification.
- Pin count is four, facilitating easy integration in circuit design.
Product Description
The Nexperia PBSS4032PZ,115 is a low saturation voltage PNP bipolar junction transistor housed in a 4-pin SOT-223 surface mount package. It is engineered for applications that demand high collector current capacity and reduced losses to improve efficiency and reduce heat generation.
This transistor supports a maximum DC collector current of -4.9 amperes and withstands a collector emitter voltage up to -30 volts. It provides a minimum DC current gain of 60 which makes it suitable for switching and amplification in digital circuits.
The device operates reliably in harsh environmental conditions with an operating temperature range from -65°C to 150°C. Its maximum power dissipation is rated at 2 watts, balancing performance and thermal management.
Featuring a compact design with dimensions 6.7 mm length, 7.3 mm width, and 1.8 mm height, the PBSS4032PZ series is ideal for space-constrained industrial, automotive, and power electronics applications. It is compliant with RoHS standards and meets the stringent AEC-Q101 automotive qualification, ensuring durability in demanding automotive environments.
Applicable in various sectors such as consumer electronics, industrial control systems, automotive electronics, and power supply circuits, this PNP bipolar transistor offers reliable performance and energy efficiency.
This transistor supports a maximum DC collector current of -4.9 A. Maximum collector emitter voltage rating is -30 V. Surface mount 4-pin SOT-223 package type. Minimum DC current gain of 60. Operating temperature range from -65°C to 150°C.
Maximum power dissipation of 2 W. Compliant with RoHS and AEC-Q101 automotive standard. Compact dimensions: 6.7 mm x 7.3 mm x 1.8 mm. Explore the Nexperia range of Bipolar Transistors on EnvMart for efficient and compact semiconductor solutions tailored for industrial and automotive use cases.
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Frequently Asked Questions
The maximum DC collector current for this model is -4.9 A.
This transistor has a maximum collector-emitter voltage rating of -30 V.
It offers a minimum DC current gain (hFE) of 60, suitable for amplification applications.
The operating temperature range for this transistor is from -65°C to 150°C.
It is housed in a 4-pin SOT-223 surface mount package.
The dimensions of this model are 6.7 mm in length, 7.3 mm in width, and 1.8 mm in height.
The maximum power dissipation is rated at 2 W.
Yes, it meets the AEC-Q101 automotive qualification standard.
The maximum emitter-base voltage (VEBO) is -5 V.
This PNP bipolar transistor is suitable for applications in consumer electronics, industrial control systems, automotive electronics, and power supply circuits.
The transistor polarity is PNP, designed for single configuration use.
The maximum transition frequency (ft) for this model is 100 MHz.
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