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onsemi Bipolar PNP Power Transistor 25 A, 260 V, 200 W TO-264 5-Pin NJL1302DG

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Korea
Brand onsemi
Height 46.79mm
Length 20.02mm
Model NJL1302DG
Width 5.18mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-264
Minimum Operating Temperature -65°C
Pin Count 5
Maximum Collector Emitter Voltage Vceo -260V
Minimum DC Current Gain hFE 45
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 260V
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc -25A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz
onsemi NJL1302DG Transistor, -25 A PNP, -260 V, 5-Pin TO-264Brand onsemi

Key Features

  • The transistor features a TO-264 package with 5 through-hole pins for reliable mounting.
  • It has a maximum power dissipation of 200 W, supporting high power operation.
  • The device offers a minimum DC current gain of 45 for efficient signal amplification.
  • The operating temperature range extends from -65°C to 150°C, suitable for demanding environments.
  • Applications include high-fidelity consumer audio and professional audio amplifier systems.
  • Thermally matched bias diode eliminates thermal runaway, ensuring stable operation.
  • Provides instant thermal bias tracking for superior sound quality performance.
  • High safe operating area and absolute thermal integrity improve reliability under stress.

Product Description

onsemi NJL1302DG Bipolar PNP Power Transistor supports a maximum collector current of 25 A and a collector-emitter voltage rating of 260 V, packaged in a durable TO-264 with 5 pins for through-hole mounting. Designed with features that eliminate thermal equilibrium lag time and bias trimming, this transistor is ideal for high-fidelity audio applications and provides protection in transistor die circuits. It offers reliable performance with a minimum current gain (hFE) of 45 and power dissipation up to 200 W.

The device operates effectively in a temperature range of -65°C to 150°C, making it suitable for industrial, consumer audio, and professional amplifier environments. Its thermally matched bias diode and instant thermal bias tracking ensure stable sound quality and prevent thermal runaway, enhancing operation safety. The transistor’s absolute thermal integrity and high safe operating area further underscore its robustness and reliability for demanding power applications.

Packaging and pin configuration (5-pin TO-264) ensures ease of integration into through-hole PCB designs. Its PNP configuration and single transistor design make it a versatile component for discrete semiconductor applications in various power and audio equipment.

Key technical specifications include a maximum collector-base voltage of 260 V and maximum emitter-base voltage of 5 V, with a maximum transition frequency of 1 MHz. The transistor is RoHS compliant with no automotive standard certification and originates from Korea, Republic Of.

The transistor is designed to minimize thermal lag and ensure consistent biasing for audio amplifiers. It ensures enhanced sound quality and stereo integrity via thermal bias tracking. High power dissipation capacity allows use in demanding industrial and commercial applications.

Its robust construction supports reliable operation across wide temperature ranges. Provides high safe operating areas, safeguarding against electrical overstress. Suitable for professional and consumer audio equipment requiring PNP transistor solutions.

Eliminates need for frequent bias trimming and reduces complexity of audio circuits. Explore the onsemi range within EnvMart to find compatible discrete semiconductor components and bipolars that meet your industrial and electronic design requirements.

Explore more products in our Bipolar Transistors category.

onsemi Bipolar PNP Power Transistor 25 A, 260 V, 200 W TO-264 5-Pin NJL1302DG
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Frequently Asked Questions

The NJL1302DG transistor supports a maximum collector current of 25 A.

It has a collector-emitter voltage rating of 260 V and a maximum collector-base voltage of 260 V.

The transistor can dissipate a maximum power of 200 W, making it suitable for high power applications.

This model operates effectively within a temperature range of -65°C to 150°C.

The NJL1302DG features a 5-pin configuration for through-hole mounting.

The minimum DC current gain (hFE) for the NJL1302DG is 45.

It is packaged in a TO-264 format, which is suitable for through-hole mounting.

The maximum transition frequency for this model is 1 MHz.

The NJL1302DG is a PNP bipolar transistor designed for power applications.

This transistor is suitable for high-fidelity consumer audio and professional audio amplifier systems.

The maximum emitter-base voltage (VEBO) for this model is 5 V.

The NJL1302DG is manufactured in Korea.

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