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| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Height | 46.79mm |
| Length | 20.02mm |
| Model | NJL1302DG |
| Width | 5.18mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 5 |
| Maximum Collector Emitter Voltage Vceo | -260V |
| Minimum DC Current Gain hFE | 45 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 260V |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | -25A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
| onsemi NJL1302DG Transistor, -25 A PNP, -260 V, 5-Pin TO-264Brand | onsemi |
onsemi NJL1302DG Bipolar PNP Power Transistor supports a maximum collector current of 25 A and a collector-emitter voltage rating of 260 V, packaged in a durable TO-264 with 5 pins for through-hole mounting. Designed with features that eliminate thermal equilibrium lag time and bias trimming, this transistor is ideal for high-fidelity audio applications and provides protection in transistor die circuits. It offers reliable performance with a minimum current gain (hFE) of 45 and power dissipation up to 200 W.
The device operates effectively in a temperature range of -65°C to 150°C, making it suitable for industrial, consumer audio, and professional amplifier environments. Its thermally matched bias diode and instant thermal bias tracking ensure stable sound quality and prevent thermal runaway, enhancing operation safety. The transistor’s absolute thermal integrity and high safe operating area further underscore its robustness and reliability for demanding power applications.
Packaging and pin configuration (5-pin TO-264) ensures ease of integration into through-hole PCB designs. Its PNP configuration and single transistor design make it a versatile component for discrete semiconductor applications in various power and audio equipment.
Key technical specifications include a maximum collector-base voltage of 260 V and maximum emitter-base voltage of 5 V, with a maximum transition frequency of 1 MHz. The transistor is RoHS compliant with no automotive standard certification and originates from Korea, Republic Of.
The transistor is designed to minimize thermal lag and ensure consistent biasing for audio amplifiers. It ensures enhanced sound quality and stereo integrity via thermal bias tracking. High power dissipation capacity allows use in demanding industrial and commercial applications.
Its robust construction supports reliable operation across wide temperature ranges. Provides high safe operating areas, safeguarding against electrical overstress. Suitable for professional and consumer audio equipment requiring PNP transistor solutions.
Eliminates need for frequent bias trimming and reduces complexity of audio circuits. Explore the onsemi range within EnvMart to find compatible discrete semiconductor components and bipolars that meet your industrial and electronic design requirements.
Explore more products in our Bipolar Transistors category.
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