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onsemi Transistor, NPN Bipolar, 600 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-23 MMBT2222ALT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT2222ALT1G
Width 1.4mm
Mount Type Surface
Series MMBT2222AL
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi MMBT2222ALT1G Transistor, 600 mA NPN, 30 V, 3-Pin SOT-23Brand onsemi
Nexperia MMBT2222A,215 Transistor, 600 mA NPN, 40 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • Compact 3-Pin SOT-23 surface mount package suitable for low power applications.
  • Maximum collector current of 600 mA for medium power handling.
  • Collector emitter voltage rating of 30 V ensuring robustness in circuits.
  • High transition frequency up to 100 MHz for fast switching performance.
  • Automotive grade AEC-Q101 certification for reliability in automotive systems.
  • Maximum power dissipation of 225 mW enabling efficient heat handling.
  • Minimum DC current gain (hFE) of 30 for adequate amplification.
  • Wide operating temperature range up to 150°C for harsh environments.

Product Description

onsemi MMBT2222ALT1G is a NPN bipolar transistor ideal for both linear and switching electronic applications. It features a maximum DC collector current rating of 600 mA and a collector emitter voltage rating of 30 V, making it suitable for medium-power circuits on surface mount technology (SMT) designs. This device comes in a compact 3-Pin SOT-23 package optimized for low power surface mounting.

The transistor offers a maximum collector base voltage of 60 V and can operate safely up to a maximum emitter base voltage of 5 V. It has a minimum DC current gain (hFE) of 30, supporting a reliable amplification factor in various circuit designs. The maximum transition frequency (ft) of 100 MHz ensures that the transistor can perform well in fast switching applications.

Designed to withstand temperatures up to 150°C, this transistor complies with the automotive standard AEC-Q101, ensuring strong performance and reliability in automotive and industrial electronic systems. Its maximum power dissipation is rated at 225 mW, supporting efficient thermal management under normal operating conditions.

Physical dimensions of the transistor include a length of 3.04 mm, width of 1.4 mm, and height of 1.11 mm, which allows for compact integration on printed circuit boards (PCBs) where space-saving is critical.

Compact 3-Pin SOT-23 package for SMT applications. 600 mA maximum DC collector current for medium power use. 30 V maximum collector emitter voltage suitable for various circuits. 100 MHz maximum transition frequency for fast switching.

AEC-Q101 automotive standard for enhanced reliability. 225 mW power dissipation for effective heat management. Wide operating temperature range up to 150°C. Physical dimensions suitable for compact PCB mounting.

This transistor is widely used in industrial, automotive, electronic manufacturing, and power supply applications requiring high switching speed and moderate current handling in a surface mount format. Explore the extensive range of onsemi transistors for electronics design and manufacturing on EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Transistor, NPN Bipolar, 600 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-23 MMBT2222ALT1G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 600 mA, making it suitable for medium power applications.

The collector emitter voltage rating is 30 V, which ensures robustness in various circuit designs.

This transistor has a maximum transition frequency of 100 MHz, allowing for fast switching performance.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height, suitable for compact PCB mounting.

The maximum power dissipation is rated at 225 mW, supporting efficient thermal management during operation.

The minimum DC current gain (hFE) is 30, which provides adequate amplification in various circuit applications.

It can operate safely at a maximum temperature of 150°C, making it suitable for harsh environments.

The MMBT2222ALT1G comes in a compact 3-Pin SOT-23 surface mount package, optimized for low power applications.

Yes, it complies with the automotive standard AEC-Q101, ensuring reliability in automotive systems.

The maximum collector base voltage is 60 V, allowing for safe operation in various circuit configurations.

The maximum emitter base voltage is 5 V, providing additional safety in circuit designs.

This transistor is widely used in industrial, automotive, electronic manufacturing, and power supply applications requiring high switching speed.

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