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Infineon N-Channel IGBT Module 225 A 1200 V 7-Pin 62 mm Clamp Mount FF150R12KE3GB2HOSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 29mm
Length 106.4mm
Model FF150R12KE3GB2HOSA1
Width 61.4mm
Mount Type Clamp
Maximum Operating Temperature 125°C
Package Type 62 mm Module
Minimum Operating Temperature -40°C
Pin Count 7
Maximum Continuous Collector Current Ic 225A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Channel Type N
Maximum Power Dissipation Pd 780W
Maximum Gate Emitter Voltage VGEO 20 V
Package styles include 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

Key Features

  • This IGBT module supports a maximum power dissipation of 780 W.
  • The device operates efficiently up to 1 MHz switching speed.
  • Maximum gate emitter voltage is rated at 20 V providing strong control flexibility.
  • Designed for robust thermal management with operating temperatures ranging from -40°C to 125°C.
  • Compact dimensions of 106.4 mm length, 61.4 mm width, and 29 mm height.
  • The maximum collector emitter saturation voltage (VceSAT) is 2 V, ensuring low conduction losses.
  • Provides reliable industrial-grade performance for inverter, UPS, and drive applications.
  • The package style includes 62 mm modules with clamp mounting for secure fixing.

Product Description

Infineon FF150R12KE3GB2HOSA1 is a high-performance N-Channel IGBT Module engineered for industrial power electronics applications. With a continuous collector current rating of 225 A and a collector emitter voltage of 1200 V, this module is designed to deliver efficient switching performance while maintaining thermal robustness.

The 7-pin package utilizes a clamp mounting system and measures 62 mm in size, providing secure mechanical installation and optimal heat dissipation. The device offers a maximum power dissipation of 780 W and supports switching frequencies up to 1 MHz, making it suitable for high-frequency inverter circuits, uninterruptible power supplies (UPS), and industrial motor drives.

Operating temperatures span from -40°C minimum to 125°C maximum, allowing deployment in demanding environments with wide temperature fluctuations. The module achieves a low maximum collector emitter saturation voltage of 2 V, which reduces conduction losses and improves overall power efficiency.

Dimensions of 106.4 mm length, 61.4 mm width, and 29 mm height enable compatibility in compact power assemblies. The device does not hold any specific automotive certifications but meets general industrial power semiconductor standards.

The IGBT module incorporates Infineon's TrenchstopTM and Fieldstop technologies, delivering reduced switching losses and facilitating both hard and soft switching applications. Typical use cases include industrial automation, power conversion, agricultural machinery, and commercial electrical systems.

This IGBT Module supports a maximum power dissipation of 780 W. The device operates efficiently up to 1 MHz switching speed. Maximum gate emitter voltage is rated at 20 V providing strong control flexibility. Designed for robust thermal management with operating temperatures ranging from -40°C to 125°C.

Compact dimensions of 106.4 mm length, 61.4 mm width, and 29 mm height. The maximum collector emitter saturation voltage (VceSAT) is 2 V, ensuring low conduction losses. Provides reliable industrial-grade performance for inverter, UPS, and drive applications.

The package style includes 62 mm modules with clamp mounting for secure fixing. Explore the complete range of Infineon power modules and semiconductor components on EnvMart to find the ideal solution for your industrial and electronic design needs.

Infineon N-Channel IGBT Module 225 A 1200 V 7-Pin 62 mm Clamp Mount FF150R12KE3GB2HOSA1
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Frequently Asked Questions

The maximum continuous collector current for this module is rated at 225 A.

The maximum collector emitter voltage (Vceo) is 1200 V.

This IGBT module supports a maximum power dissipation of 780 W.

The dimensions are 106.4 mm in length, 61.4 mm in width, and 29 mm in height.

It operates within a temperature range of -40°C to 125°C.

The maximum gate emitter voltage is rated at 20 V.

This module uses a clamp mounting system for secure installation.

The maximum collector emitter saturation voltage (VceSAT) is 2 V, which helps reduce conduction losses.

It supports switching frequencies up to 1 MHz.

This module is suitable for applications such as inverters, uninterruptible power supplies (UPS), and industrial motor drives.

This model has a 7-pin configuration.

It incorporates Infineon's TrenchstopTM and Fieldstop technologies for reduced switching losses.

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