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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 36.5mm |
| Length | 106.4mm |
| Model | FZ300R12KE3GHOSA1 |
| Width | 61.4mm |
| Mount Type | Clamp |
| Maximum Operating Temperature | 125°C |
| Package Type | 62 mm Module |
| Minimum Operating Temperature | -40°C |
| Pin Count | 5 |
| Maximum Continuous Collector Current Ic | 480A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 1.45kW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Package styles include | 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 |
Infineon FZ300R12KE3GHOSA1 N-Channel IGBT Module is a high-performance power semiconductor device capable of handling a maximum continuous collector current of 480 A and a collector-emitter voltage up to 1200 V. The module features a clamp mount 62 mm package with 5 pins, measuring 106.4 mm in length, 61.4 mm in width, and 36.5 mm in height. It is designed for robust operation in temperatures ranging from -40°C to 125°C.
This Insulated Gate Bipolar Transistor (IGBT) module incorporates Infineon’s TRENCHSTOP™ and Fieldstop technologies to deliver low switching losses at switching frequencies up to 60 kHz. It provides rapid switching suitable for hard and soft switching applications, making it ideal for industrial inverters, uninterruptible power supplies (UPS), and industrial drive systems.
The product is engineered for efficient power conversion, combining the gate-drive simplicity of MOSFETs with the high current and low saturation voltage capability of bipolar transistors in a single compact device. The clamp mount style ensures secure mechanical and thermal connection, optimal for demanding electrical power applications.
Key features include a maximum power dissipation of 1.45 kW, maximum gate-emitter voltage rating of 20 V, and a 5-pin N-channel configuration engineered for reliable performance in high-power electronic circuits. Its mechanical dimensions facilitate straightforward integration into modular power assemblies.
Constructed with a 62 mm clamp mount package for secure installation. Operates reliably within a temperature range of -40°C to 125°C. Features 5-pin configuration suitable for controlled switching applications. Maximum power dissipation of 1.45 kW supports robust performance.
Designed for use in industrial inverters, UPS systems, and industrial drives. Maximum gate-emitter voltage rating of 20 V ensures protection during switching. Compact dimensions with length 106.4mm, width 61.4mm, and height 36.5mm enable integration into varied electronic assemblies.
Clamp mounting enhances mechanical stability and thermal contact. N-channel configuration for efficient current handling.
This Infineon IGBT Module is a critical component for high-efficiency power electronics in industrial, manufacturing, and commercial equipment. It supports switching frequencies up to 60 kHz and offers durability required for demanding operational conditions.
Explore EnvMart’s extensive catalog of semiconductor and power modules for additional solutions and related products from trusted manufacturers.
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