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STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V Enhancement Mode, 3-Pin TO-220 STP3N80K5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | SuperMESH5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh K5, SuperMESH5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 3.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 9.5nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- The device features an enhancement mode channel for efficient switching.
- Maximum power dissipation is rated at 60 W for reliable operation.
- Operating temperature ranges from -55°C to 150°C, supporting demanding environments.
- Maximum gate-to-source voltage is 30 V with a typical gate charge of 9.5 nC at Vgs.
- The MOSFET has a low maximum drain-source resistance of 3.5 Ω for efficient conduction.
- Package dimensions include a height of 15.75 mm, length of 10.4 mm, and width of 4.6 mm suitable for through-hole mounting.
- Forward voltage drop is 1.5 V contributing to device efficiency.
- No automotive standard or additional approvals are specified.
Product Description
STMicroelectronics STP3N80K5 is a high-performance N-Channel MOSFET from the MDmesh K5, SuperMESH5 series designed for industrial power applications. With a maximum continuous drain current of 2.5 A and a maximum drain-source voltage of 800 V, this enhancement mode transistor is housed in a 3-pin TO-220 package optimized for through-hole mounting.
This MOSFET supports reliable operation across a wide temperature range from -55°C to 150°C, catering to rigorous industrial and electronic component needs. The device features a maximum power dissipation rating of 60 W, ensuring efficient heat handling during operation.
The typical gate charge of 9.5 nC at gate-source voltage, combined with a maximum gate-source voltage of 30 V, enables fast switching with low losses. Further, a maximum drain-source resistance of 3.5 Ω lowers conduction losses, improving overall efficiency.
Compact package dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width facilitate easy mounting and integration into power electronics assemblies. The forward voltage drop of 1.5 V supports optimized conduction characteristics.
While no specific automotive standards have been certified for this model, it is suitable for a wide range of industrial, electronic, and power management applications needing robust discrete semiconductor components.
The device is engineered to meet demanding power switching requirements in electrical and industrial systems. Its sturdy TO-220 package supports reliable thermal management and mechanical mounting. STMicroelectronics’ MDmesh K5 SuperMESH5 technology enhances switching performance and efficiency.
Product is delivered new and ready for integration into commercial or laboratory setups. Explore more discrete semiconductors and MOSFETs from STMicroelectronics and other brands at EnvMart for your electronics manufacturing and repair projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.5 A.
This MOSFET has a maximum drain-source voltage rating of 800 V.
The package dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum power dissipation is rated at 60 W.
The operating temperature range is from -55°C to 150°C.
The maximum gate-to-source voltage for this device is 30 V.
The typical gate charge at Vgs is 9.5 nC.
This model supports through-hole mounting.
The maximum drain-source resistance is 3.5 Ω.
The forward voltage drop is 1.5 V.
This model belongs to the MDmesh K5, SuperMESH5 series.
This MOSFET features an N-channel type.
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