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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | SuperMESH5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh K5, SuperMESH5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 4.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 20W |
| Typical Gate Charge Qg @ Vgs | 9.5nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STF2N80K5 is an N-Channel MOSFET from the MDmesh K5, SuperMESH5 series designed for industrial and electronic power management applications. This enhancement mode transistor supports a continuous drain current of 2 A and withstands a maximum drain-source voltage of 800 V, making it suitable for efficient switching tasks in power electronics, control circuits, and embedded systems.
Packaged in a durable 3-pin TO-220 case with through-hole mounting, this MOSFET facilitates heat dissipation and easy installation. It features a low drain-source resistance of 4.5 Ω, which minimizes conduction losses and improves energy efficiency in electronic modules.
The device operates safely over a temperature range of -55°C to 150°C, supporting reliability and longevity in challenging industrial environments. With a maximum power dissipation of 20 W, it can handle moderate power levels without overheating.
The gate controls enable high-speed switching with a maximum gate-source voltage of 30 V and a typical gate charge of 9.5 nC, suitable for precise electronic control applications and power conversion systems. The forward voltage drop is rated at 1.5 V, optimizing performance in switching circuits.
This MOSFET is ideal for use in industrial power supplies, motor drive circuits, renewable energy systems, and various electronic controls requiring robust power transistor components. It complies with standard semiconductor product quality without automotive standard certification.
High continuous drain current supports demanding switching applications. Wide voltage rating enables use in high-voltage power circuits. TO-220 package ensures mechanical robustness and thermal management. Low on-resistance enhances efficiency and reduces heat generation.
Wide operating temperature range for industrial reliability. Fast gate charge dynamics for enhanced switching performance. Suitable for power management in industrial, manufacturing, and electronic control environments. Explore EnvMart categories for more advanced semiconductor components and MOSFET solutions from top brands like STMicroelectronics.
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