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STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2 A, 800 V, Enhancement Mode, TO-220, 3-Pin STF2N80K5

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model SuperMESH5
Width 4.6mm
Mount Type Through Hole
Series MDmesh K5, SuperMESH5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 2A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 4.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 20W
Typical Gate Charge Qg @ Vgs 9.5nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V

Key Features

  • High maximum continuous drain current of 2 amperes ensures efficient switching performance.
  • Withstands high drain-source voltage up to 800 volts for robust industrial applications.
  • Packaged in a TO-220 through-hole 3-pin configuration for easy mounting.
  • Enhancement mode channel type for reliable transistor switching.
  • Maximum power dissipation rating of 20 watts supports heat management in circuits.
  • Operates within wide temperature range from -55°C to 150°C ensuring durability in harsh environments.
  • Low maximum drain-source resistance of 4.5 ohms reduces power losses during conduction.
  • Maximum gate-source voltage of 30 volts and forward voltage of 1.5 volts for precise control.

Product Description

STMicroelectronics STF2N80K5 is an N-Channel MOSFET from the MDmesh K5, SuperMESH5 series designed for industrial and electronic power management applications. This enhancement mode transistor supports a continuous drain current of 2 A and withstands a maximum drain-source voltage of 800 V, making it suitable for efficient switching tasks in power electronics, control circuits, and embedded systems.

Packaged in a durable 3-pin TO-220 case with through-hole mounting, this MOSFET facilitates heat dissipation and easy installation. It features a low drain-source resistance of 4.5 Ω, which minimizes conduction losses and improves energy efficiency in electronic modules.

The device operates safely over a temperature range of -55°C to 150°C, supporting reliability and longevity in challenging industrial environments. With a maximum power dissipation of 20 W, it can handle moderate power levels without overheating.

The gate controls enable high-speed switching with a maximum gate-source voltage of 30 V and a typical gate charge of 9.5 nC, suitable for precise electronic control applications and power conversion systems. The forward voltage drop is rated at 1.5 V, optimizing performance in switching circuits.

This MOSFET is ideal for use in industrial power supplies, motor drive circuits, renewable energy systems, and various electronic controls requiring robust power transistor components. It complies with standard semiconductor product quality without automotive standard certification.

High continuous drain current supports demanding switching applications. Wide voltage rating enables use in high-voltage power circuits. TO-220 package ensures mechanical robustness and thermal management. Low on-resistance enhances efficiency and reduces heat generation.

Wide operating temperature range for industrial reliability. Fast gate charge dynamics for enhanced switching performance. Suitable for power management in industrial, manufacturing, and electronic control environments. Explore EnvMart categories for more advanced semiconductor components and MOSFET solutions from top brands like STMicroelectronics.

STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2 A, 800 V, Enhancement Mode, TO-220, 3-Pin STF2N80K5
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Frequently Asked Questions

The maximum continuous drain current for this model is 2 A, ensuring efficient switching performance in applications.

It can withstand a maximum drain-source voltage of 800 V, making it suitable for high-voltage applications.

This model is packaged in a TO-220 configuration, which allows for through-hole mounting and effective heat dissipation.

The maximum power dissipation rating is 20 W, supporting heat management in circuits.

It operates within a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments.

The maximum gate-source voltage is 30 V, allowing for precise control in switching applications.

The typical gate charge is 9.5 nC, which supports fast switching performance.

The maximum drain-source resistance is 4.5 Ω, which helps reduce power losses during conduction.

It features an enhancement mode N-channel, which is suitable for reliable transistor switching.

The dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.

This model is ideal for industrial power supplies, motor drive circuits, and various electronic control systems.

The forward voltage drop is rated at 1.5 V, optimizing performance in switching circuits.

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