STMicroelectronics Single LDMOS N-Channel Power MOSFET, 5A, 40V, 15W, Enhancement Mode, 10-Pin PowerSO PD55015-E

STMicroelectronics PD55015-E is a high-performance Single LDMOS N-Channel Power MOSFET transistor engineered for RF power amplification applications. This enhancement mode transistor can handle a maximum continuous drain current of 5 A and a drain-source voltage up to 40 V. Packaged in a 10-pin PowerSO configuration, it supports surface mount assembly for modern electronic designs.

Operating efficiently up to 1 GHz frequency, the PD55015-E transistor is primarily used in L-band satellite uplinks and other RF power stages, delivering a typical power gain of 14 dB. The device is designed to operate reliably over a wide temperature range from -65°C to 165°C, making it suitable for diverse environmental conditions encountered in industrial and communication equipment.

The compact package dimensions (9.6mm length × 9.5mm width × 3.6mm height) optimize circuit board space without compromising performance. Being JEDEC approved further ensures it meets industry standards for quality and compatibility.

This transistor offers a single transistor configuration and is part of the LDMOS series, widely recognized for robustness and efficiency in power amplification tasks. The enhancement channel mode MOSFET technology provides excellent linearity and thermal stability, ideal for commercial, industrial, and communication device applications.

Designed as an enhancement mode RF MOSFET transistor suitable for L-band satellite uplinks. Operates efficiently over a frequency range up to 1 GHz. Supports surface mount technology with a compact PowerSO 10-pin package.

Rated single transistor configuration with typical power gain of 14 dB. Operates within temperature range of -65°C to 165°C. Package dimensions: 9.6mm length, 9.5mm width, and 3.6mm height. JEDEC approved standard ensuring industry reliability and consistency.

Specifically designed for RF and power applications from 1 MHz to 2 GHz.

This transistor is extensively used in industrial electronics, telecommunications, laboratory equipment, and aerospace for amplification and switching tasks. It is also suited for integration into RF power modules and systems requiring efficient, reliable semiconductor components.

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