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Vishay 100 V 20 A Surface Mount Schottky Diode TO-263 Package 3-Pin VB20100C-E3/4W

Category Semiconductor Diode Brand Vishay Condition New

Specifications

Country of Origin China
Diameter 10.54mm
Brand Vishay
Height 4.83mm
Length 10.45mm
Model VB20100C-E3/4W
Width 9.14mm
Mount Type Surface
Series VB20X
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -40°C
Pin Count 3
Maximum Continuous Forward Current If 20A
Peak Reverse Repetitive Voltage Vrrm 100V
Diode Configuration Common Cathode
Rectifier Type Schottky
Peak Reverse Current Ir 25mA
Peak Non-Repetitive Forward Surge Current Ifsm 150A
Maximum Forward Voltage Vf 790mV

Key Features

  • Patented Trench MOS Barrier structure improves efficiency and reduces forward voltage drop.
  • Maximum continuous forward current of 20 A suitable for high power applications.
  • Peak reverse repetitive voltage of 100 V ensures reliability in reverse polarity conditions.
  • Compact TO-263 surface mount package with dimensions 10.45mm length and 9.14mm width.
  • Operating temperature range from -40°C to 150°C allowing use in harsh environments.
  • Low maximum forward voltage of 790 mV for high efficiency power conversion.
  • Peak non-repetitive forward surge current of 150 A for transient voltage tolerance.
  • Common cathode diode configuration with 3 pins for easy integration in power circuits.

Product Description

Vishay VB20100C-E3/4W is a high-performance Schottky diode designed for efficient power rectification in industrial and commercial electronic applications.

This diode features a patented Trench MOS Barrier Schottky (TMBS) structure which minimizes stored charge and enhances switching speed significantly compared to planar Schottky rectifiers.

The device supports a maximum continuous forward current of 20 A and a peak reverse repetitive voltage of 100 V, making it suitable for demanding power supply designs.

Housed in a compact TO-263 surface mount package, this 3-pin diode measures 10.45 mm in length and 9.14 mm in width, with a height of 4.83 mm, allowing efficient thermal management and board space saving.

It operates reliably over a wide temperature range from -40°C to 150°C, accommodating harsh industrial environments. The maximum forward voltage drop is 790 mV, ensuring high efficiency and low power losses during conduction.

This diode withstands peak non-repetitive forward surge currents up to 150 A, providing robustness against transient electrical conditions. Common cathode configuration facilitates easy integration into AC/DC switched-mode power supplies and DC/DC converter circuits.

Manufactured in China under Vishay’s high-quality standards, the VB20100C-E3/4W diode is suitable for applications in industrial power supplies, automotive electronics, consumer devices, and telecommunications equipment.

Patented Trench MOS Barrier structure enhances efficiency and switching speed. 20 A continuous forward current supports high-power electronics. 100 V reverse voltage rating ensures reliability in reverse polarity. Compact TO-263 surface mount package dimensions for efficient space usage.

Wide operating temperature range from -40°C to 150°C for industrial use. Low forward voltage drop of 790 mV reduces power loss during operation. High surge current capability of 150 A for transient tolerance. Common cathode configuration for circuit integration simplicity.

Ideal for AC/DC power supplies and DC/DC converter designs. Explore the Semiconductor Diode category on EnvMart for more Vishay power diodes and related components to suit your electronics design requirements.

Vishay 100 V 20 A Surface Mount Schottky Diode TO-263 Package 3-Pin VB20100C-E3/4W
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Frequently Asked Questions

The maximum continuous forward current of the Vishay VB20100C-E3/4W is 20 A, making it suitable for high power applications.

This model has a peak reverse repetitive voltage rating of 100 V, ensuring reliability in reverse polarity conditions.

The TO-263 package measures 10.45 mm in length, 9.14 mm in width, and has a height of 4.83 mm.

The operating temperature range of this diode is from -40°C to 150°C, allowing use in harsh environments.

The maximum forward voltage drop for this model is 790 mV, which contributes to high efficiency power conversion.

This diode can withstand a peak non-repetitive forward surge current of 150 A, providing robustness against transient electrical conditions.

The Vishay VB20100C-E3/4W features a common cathode diode configuration, facilitating easy integration into power circuits.

This model is a Schottky rectifier, which is designed for efficient power rectification in industrial and commercial applications.

The peak reverse current for this diode is 25 mA, which indicates its performance under reverse bias conditions.

The patented Trench MOS Barrier structure improves efficiency and reduces forward voltage drop, enhancing the overall performance of the diode.

This diode is suitable for applications in industrial power supplies, automotive electronics, consumer devices, and telecommunications equipment.

The Vishay VB20100C-E3/4W diode is manufactured in China under Vishay’s high-quality standards.

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