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| Country of Origin | China |
|---|---|
| Diameter | 10.54mm |
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.45mm |
| Model | VB20100C-E3/4W |
| Width | 9.14mm |
| Mount Type | Surface |
| Series | VB20X |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 20A |
| Peak Reverse Repetitive Voltage Vrrm | 100V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 25mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A |
| Maximum Forward Voltage Vf | 790mV |
Vishay VB20100C-E3/4W is a high-performance Schottky diode designed for efficient power rectification in industrial and commercial electronic applications.
This diode features a patented Trench MOS Barrier Schottky (TMBS) structure which minimizes stored charge and enhances switching speed significantly compared to planar Schottky rectifiers.
The device supports a maximum continuous forward current of 20 A and a peak reverse repetitive voltage of 100 V, making it suitable for demanding power supply designs.
Housed in a compact TO-263 surface mount package, this 3-pin diode measures 10.45 mm in length and 9.14 mm in width, with a height of 4.83 mm, allowing efficient thermal management and board space saving.
It operates reliably over a wide temperature range from -40°C to 150°C, accommodating harsh industrial environments. The maximum forward voltage drop is 790 mV, ensuring high efficiency and low power losses during conduction.
This diode withstands peak non-repetitive forward surge currents up to 150 A, providing robustness against transient electrical conditions. Common cathode configuration facilitates easy integration into AC/DC switched-mode power supplies and DC/DC converter circuits.
Manufactured in China under Vishay’s high-quality standards, the VB20100C-E3/4W diode is suitable for applications in industrial power supplies, automotive electronics, consumer devices, and telecommunications equipment.
Patented Trench MOS Barrier structure enhances efficiency and switching speed. 20 A continuous forward current supports high-power electronics. 100 V reverse voltage rating ensures reliability in reverse polarity. Compact TO-263 surface mount package dimensions for efficient space usage.
Wide operating temperature range from -40°C to 150°C for industrial use. Low forward voltage drop of 790 mV reduces power loss during operation. High surge current capability of 150 A for transient tolerance. Common cathode configuration for circuit integration simplicity.
Ideal for AC/DC power supplies and DC/DC converter designs. Explore the Semiconductor Diode category on EnvMart for more Vishay power diodes and related components to suit your electronics design requirements.
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